Microelectronic Engineering
 1992
DOI: 10.1016/s0167-9317(05)80004-8
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Thick selective epitaxial growth of silicon at 960°C using silane only

N. Afshar-Hanaii
1
,
J. M. Bonar
2
,
A G R Evans
3
et al.
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Cited by 7 publications
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References 14 publications
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Low temperature selective growth of epitaxial Si and Si1−xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities

Caymax
1
,
Poortmans
2
,
Ammel
3
et al. 1994
Thin Solid Films
6
0
3
0
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Low temperature selective growth of epitaxial Si and Si1−xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities

Caymax
1
,
Poortmans
2
,
Ammel
3
et al. 1994
Thin Solid Films
6
0
3
0
View full textAdd to dashboardCite

Calculations of selective Si epitaxial growth

Chai
1
,
Muthukumar
2
,
Haverty
3
et al. 2020
Applied Surface Science
2
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2
0
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Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition

Zhang
1
,
Lloyd
2
,
Osman
3
et al. 2004
Microelectronic Engineering
4
0
2
0
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