Low temperature selective growth of epitaxial Si and Si1−xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities

Caymax, Matty; Poortmans, Jef; Ammel, A. Van; Líbezný, Milan; Nijs, J.; Mertens, R.

doi:10.1016/0040-6090(94)90450-2

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…In general, the thicker the SiGe layer, the greater the risk of dislocation defects in the film. In this paper, the thicker SiGe layer and the quality of the film are preserved because the strain of the SiGe layer is compensated under boron autodoping. – …”

Section: Methodsmentioning

confidence: 99%

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Wang,

Kong,

et al. 2023

ACS Appl. Nano Mater.

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As a representative of new semiconductor nanostructured materials, the Si0.7Ge0.3/Si multilayers have received extensive attention for electronic and photonic applications. We fabricated an uncooled detector consisting of a four-period intrinsic Si0.7Ge0.3/Si multilayer as an active part and two p-type doped electrodes (a PIP profile) for long wavelength infrared detection. The strain in the SiGe/Si multilayer was characterized globally by high-resolution X-ray diffraction (HRXRD) and locally by nanobeam diffraction (NBD) in a high-resolution transmission electron microscope. The performance of detectors was characterized by the temperature coefficient of resistance (TCR), voltage noise power spectral density, and dark current measurement. The detectors with graphene on the top electrode show an improvement for TCR from −2.65%/K to −3.94%/K. Based on our results, the SiGe/Si multilayer structure is an excellent thermal imaging material due to its excellent thermal response as well as its CMOS compatibility.

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Section: Methodsmentioning

confidence: 99%

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Wang,

Kong,

et al. 2023

ACS Appl. Nano Mater.

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“…Mogami et al demonstrated that the growth rate in UHV-CVD from Si 2 H 6 was lower on polysilicon than on single crystal for low flow rates and equal once a threshold flow rate was reached. 31 Caymax et al 32 reported that for SiH 4 -based UHV-CVD, the deposition rate on single crystal exceeded that on polysilicon at SiH 4 pressures below 100 mTorr and the reverse occurred at higher pressures. The process presented here used similar SiH 2 Cl 2 partial pressures and showed a reversal in the deposition rate ratio as pressure increased from 10 to 40 Torr.…”

Section: Growth Rates Of Epitaxial and Polycrystalline Silicon-tablementioning

confidence: 99%

“…Caymax et al speculate that these growth rate differences arise from the effects of grain boundaries at the silicon surface, both in the desorption of reaction by-products and in Si adatom incorporation. 32 It is also known that each different crystal orientation has a different deposition rate 33 and that LPCVD polysilicon, the gate material onto which the selective deposition occurred, tends to have <110> grain orientation. 34 The difference in growth rates between the epitaxy surfaces and the polysilicon surfaces is likely to be a combination of these two effects.…”

Section: Growth Rates Of Epitaxial and Polycrystalline Silicon-tablementioning

confidence: 99%

Facet‐Free Selective Silicon Epitaxy by Reduced‐Pressure Chemical Vapor Deposition Process Evaluation and Impact on Shallow Trench Isolation

Violette

Chao

Wise

et al. 1999

J. Electrochem. Soc.

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A facet-free, selective epitaxy process has been identified using the SiH 2 Cl 2 /HCl/H 2 chemistry in single-wafer reduced-pressure chemical vapor deposition. The process window has been explored with respect to shallow trench isolation, simultaneous polycrystalline silicon (polysilicon) deposition, facet formation, and electrical parameters of polysilicon sheet resistance and junction leakage current. The isolation structure can be severely degraded by aggressive pre-epitaxy bakes through volatile SiO formation; however, the impact is minimized when the prebake is limited to 900ЊC, 60 s. Concurrent deposition of polysilicon and silicon epitaxy can result in significantly different deposition rates. Low process pressures result in greater relative epitaxy growth rates and high pressures result in lower relative epitaxy deposition rates. The facet-free process depends heavily on both the gate sidewall structure and the process conditions, where the combination of an undercut into the pad oxide and the nitride sidewall with the process pressure yield a reliably facet-free process. Electrical results demonstrate that standard Ti or Co self-aligned silicidation can be extended into a 0.1 m gate length regime.

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Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth

Chollet

André

Vandervorst

et al. 1995

Journal of Crystal Growth

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Low temperature selective growth of epitaxial Si and Si1−xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities

Cited by 6 publications

References 13 publications

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Facet‐Free Selective Silicon Epitaxy by Reduced‐Pressure Chemical Vapor Deposition Process Evaluation and Impact on Shallow Trench Isolation

Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth

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