Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth

Chollet, Frederic; André, E.; Vandervorst, Wilfried; Caymax, Matty

doi:10.1016/0022-0248(95)00382-7

Cited by 7 publications

(2 citation statements)

References 17 publications

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“…19,20 In this section, a correlation is shown between the oxygen/ carbon levels measured by SIMS at the substrate/epi interface and the surface roughness measured by AFM. It has been reported that at low growth temperature (Ͻ700°C), carbon and/or oxygen contamination of the substrate affects the surface morphology.…”

Section: B Effect Of Initial Substrate Preparation On Roughnessmentioning

confidence: 99%

Epitaxy of Si/Si1−xGex heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor

Lafontaine

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk singlecrystal SiGe and Si substratesTwo different roughening mechanisms are studied using a production-ready epitaxial deposition system to grow various epilayers, including the base layer of bipolar transistors. Surface roughness is measured using atomic force microscopy and transmission electron microscopy is used for cross-sectional analysis. Very smooth surfaces are routinely obtained, with a root mean square roughness of 0.15 nm. However, two possible mechanisms are shown to increase surface roughness under certain conditions. Above a certain critical thickness, for growth temperatures higher than 525°C and Ge compositions above 25%, strain redistribution results in surface ripples with a typical wavelength of the order of 100 nm. In addition, we find that substrate contamination ͑C,O͒ can produce wide depressions, several hundreds of nm wide and on average 10 nm deep in Si epilayers. The addition of a small concentration of Ge ͑below 15%͒ seems to produce more planar growth compared to the same thickness ͑50 nm͒ of Si only. The origin of the different surface morphologies observed is discussed.

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Section: B Effect Of Initial Substrate Preparation On Roughnessmentioning

confidence: 99%

Epitaxy of Si/Si1−xGex heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor

Lafontaine

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…surface roughness of 48 nm. This evidences the presence of contaminants at the substrate surface, 25 which prevent any subsequent high-quality epitaxial growth. Fig.…”

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confidence: 99%

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Wang

Stodolna

Bahri

et al. 2015

Applied Physics Letters

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International audienceWe evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

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N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Meunier-Beillard

Caymax

Nieuwenhuysen

et al. 2004

Applied Surface Science

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Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth

Cited by 7 publications

References 17 publications

Epitaxy of Si/Si1−xGex heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor

Epitaxy of Si/Si1−xGex heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor

Abrupt GaP/Si hetero-interface using bistepped Si buffer

N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

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