Thick oxide MOS transistors for ionizing radiation dose measurement

Sarrabayrouse, G.; Gessinn, F.

doi:10.1051/radiopro/1994006

Cited by 14 publications

(8 citation statements)

References 33 publications

(32 reference statements)

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“…Many in ves ti ga tions [17][18][19][26][27][28][29][30][31][32][33] have shown that the ex po sure of MOS com po nents to gamma and X-ray ir ra di a tion leads to the in crease of elec tri cal charge in the in su lat ing gate ox ide (net pos i tive ox ide trapped charge) and in ter face charge (in ter face traps). The do sim e try of ion iz ing ra di a tion us ing MOS transis tor is based on the mea sure ment of pos i tive ox ide trapped charge in the gate ox ide Q ox and in ter face traps Q it .…”

Section: Discussionsmentioning

confidence: 99%

Sensitivity of RADFET for gamma and X-ray doses used in medicine

et al. 2014

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In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using 60Co source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift DVT and radiation dose D. The application of positive bias of +5 V at the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in DVT and also, approximately a linear dependence between DVT and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range. [Projekat Ministarstva nauke Republike Srbije, br. 171007]

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Section: Discussionsmentioning

confidence: 99%

Sensitivity of RADFET for gamma and X-ray doses used in medicine

et al. 2014

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“…It was shown [33], [34] that sensitivity increases with gate voltage increase during irradiation and that it is higher in the case of positive gate bias, then negative gate bias (the lowest sensitivity is for zero gate bias). Furthermore, an increase in sensitivity can also be achieved with the increase in gate oxide layer thickness [35] and by processing conditions, which determine the FT density, their capture cross section and their location as well as the interface traps density [36].…”

Section: Radiation Sensitive Mosfet Parametersmentioning

confidence: 99%

Application of p-Channel Power VDMOSFET as a High Radiation Doses Sensor

Pejović

2015

IEEE Trans. Nucl. Sci.

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This paper presents a comparative study of RAD-FETs and commercial p-channel power VDMOSFETs sensitivity to gamma-ray irradiation. Sensitivity was characterized by the threshold voltage shift determined from extrapolated linear region of transfer characteristics in saturation as a function of radiation dose. Sensitivity was followed in the dose range from 100 Gy to 500 Gy without and with V gate bias. Linear dependence between threshold voltage shift and radiation dose was established for components for which the gate bias during irradiation was V. Sensitivity of p-channel power VDMOS-FETs is larger than the RADFETs, and it is a consequence of a larger concentration of fixed traps generated by gamma-ray irradiation. The mechanisms responsible for the threshold voltage shift during irradiation have been discussed as well. The fading of these components was also monitored at room temperature up to 24 hours and it was shown that it is larger in p-channel power VDMOSFETs then in RADFETs.

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“…It was shown that the response is linear for low doses and progressively saturates at a maximum values which respect to gate bias [40]. The linear dependence is given by [36] …”

Section: Important Pmos Dosimetric Parametersmentioning

confidence: 99%

“…In the case of positive gate bias, the sensitivity is higher, than in the case of negative gate bias and the lowest sensitivity being for zero gate bias [20]. Moreover, sensitivity increase can be achieved by increasing the gate oxide thickness [36][37][38][39] and by processing conditions which determine the FT density, their capture cross section and their location as well as the ST density [40].…”

Section: Important Pmos Dosimetric Parametersmentioning

confidence: 99%

Application of pMOS Dosimeters in Radiotherapy

Pejović¹

2017

Radiotherapy

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The results of a study on pMOS dosimeters manufactured by Tyndall National Institute, Cork, Ireland and their sensitivity on radiation doses used in radiotherapy are presented. Firstly, we deal with analysis of defect precursors created by ionizing radiation, responsible for increase in fixed and switching traps, which are further responsible for threshold voltage shift as a dosimetric parameter. Secondly, influence of some parameters, such as gate bias during irradiation, gate oxide thickness and photons energies, on threshold voltage shift is presented. Fading of irradiated pMOS dosimeters and possible application of commercial MOSFETs in ionizing radiation dosimetry are also presented.

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Thick oxide MOS transistors for ionizing radiation dose measurement

Cited by 14 publications

References 33 publications

Sensitivity of RADFET for gamma and X-ray doses used in medicine

Sensitivity of RADFET for gamma and X-ray doses used in medicine

Application of p-Channel Power VDMOSFET as a High Radiation Doses Sensor

Application of pMOS Dosimeters in Radiotherapy

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