Application of pMOS Dosimeters in Radiotherapy

Abstract

The results of a study on pMOS dosimeters manufactured by Tyndall National Institute, Cork, Ireland and their sensitivity on radiation doses used in radiotherapy are presented. Firstly, we deal with analysis of defect precursors created by ionizing radiation, responsible for increase in fixed and switching traps, which are further responsible for threshold voltage shift as a dosimetric parameter. Secondly, influence of some parameters, such as gate bias during irradiation, gate oxide thickness and photons energies, on threshold voltage shift is presented. Fading of irradiated pMOS dosimeters and possible application of commercial MOSFETs in ionizing radiation dosimetry are also presented.