Thermoelectric power of AIBIIIC2II type compounds in the solid and liquid state

The electrical parameters of undoped melt grown A'B1I1Cz1 crystals are compared with predictions which can made considering the deviations from stoichiometry due to the incongruent evaporation of these compounds. It is shown that the electrical properties of all AIB1llCyl cornpounds can be interpreted in a consistent manner if the electrical activity (donor or acceptor) of the intrinsic defects is considered in the covalent bonding model.Die elektrischen Parameter undotierter, aus der Schmelze gezuchteter A'B1llCz'-Kristalle werden mit dcn Voraussagen verglichen, die sich aus einer Betrachtung der durch die inkongruente Verdampfung bedingten Stochiometrieabweichungen ergeben. E s wird gezeigt, daR eine widerspruchsfrrie Interpretation der elektrischen Eigenschaften aller A'BIIIC~I-Verbindungen mijglich ist, wenn die elektrische Wirkung (Donator otler Akzeptor) der Eigendefekte ini Model1 der kovaleritrn Bindung betrachtet wird.

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Thermoelectric power of A^IB^IIIC₂^II type compounds in the solid and liquid state

Cited by 2 publications

References 1 publication

Epitaxial layers of CuInTe₂ on GaAs

Epitaxial layers of CuInTe₂ on GaAs

Influence of intrinsic defects on the electrical properties of A^IB^IIIC compounds

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Thermoelectric power of AIBIIIC2II type compounds in the solid and liquid state

Cited by 2 publications

References 1 publication

Epitaxial layers of CuInTe2 on GaAs

Epitaxial layers of CuInTe2 on GaAs

Influence of intrinsic defects on the electrical properties of AIBIIIC compounds

Contact Info

Product

Resources

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Thermoelectric power of A^IB^IIIC₂^II type compounds in the solid and liquid state

Epitaxial layers of CuInTe₂ on GaAs

Epitaxial layers of CuInTe₂ on GaAs

Influence of intrinsic defects on the electrical properties of A^IB^IIIC compounds