A new method to grow single crystals with stoichiometry close to 1:1:2 of CuInTe 2 , an important member of the Cu-III-VI 2 family of semiconductors is described. This consists of tellurization in the liquid phase of stoichiometric Cu and In and later solidification under directional freezing. It is found from energy dispersive spectroscopy that the ingots obtained with the evaporation temperature (T t ) of Te at 590 and 635°C were very close to the ideal stoichiometry 1:1:2. Samples of all ingots obtained with T t between 530 and 690°C, as studied by xray and differential thermal analysis, were of single phase having chalcopyrite structure and p-type conductivity. Optical and electrical characterization of different ingots were made. The acceptor ionization energy E A and the density of states effective mass m p * of the holes are estimated from the temperature dependence of the hole concentration p in samples of different ingots. m p * = (0.78 ± 0.02) m e agrees quite well with the reported value. From a combined analysis of the variation of E A with p 1/3 and the knowledge of molecularity and valence stoichiometry of each sample, it is established that the shallow acceptor level observed in different samples with E A (0) − 30 meV is due to V In .