Influence of intrinsic defects on the electrical properties of A^IB^IIIC compounds

Abstract

The electrical parameters of undoped melt grown A'B1I1Cz1 crystals are compared with predictions which can made considering the deviations from stoichiometry due to the incongruent evaporation of these compounds. It is shown that the electrical properties of all AIB1llCyl cornpounds can be interpreted in a consistent manner if the electrical activity (donor or acceptor) of the intrinsic defects is considered in the covalent bonding model.Die elektrischen Parameter undotierter, aus der Schmelze gezuchteter A'B1llCz'-Kristalle werden mit dcn Voraussagen verglichen, die sich aus einer Betrachtung der durch die inkongruente Verdampfung bedingten Stochiometrieabweichungen ergeben. E s wird gezeigt, daR eine widerspruchsfrrie Interpretation der elektrischen Eigenschaften aller A'BIIIC~I-Verbindungen mijglich ist, wenn die elektrische Wirkung (Donator otler Akzeptor) der Eigendefekte ini Model1 der kovaleritrn Bindung betrachtet wird.

Sound Velocities and Elastic Moduli in CuInTe2 and CuInSe2

“…Also the microhardness, in general, increases with increasing deviation from stoichiometry. It is well known [9,25 to 271 now that the relative concentration of the large number of different intrinsic defects and defect complexes originating from the deviation from molecularity and valence stoichiometry determine the conductivity type in ternary compounds. Thus it has been suggested that these same defects and their equilibrium conditions are very likely responsible for the variation in the microhardness of n-and p-type CIS samples.…”

Compositional, structural, optical and electrical characterization of CulnTe2 grown by the tellurization of stoichiometric Cu and in in the liquid phase

“…Neumann 25 by extending the models developed by Van Vechten 26 for elemental and binary compound semiconductors has estimated the formation energy of intrinsic defects in CIS. This, given in Table 3 of Ref.…”

“…There is report in G. MARIN, 1 S.M. 10,11 It is for this reason that the defect levels observed at 58 and 15 meV in the electrical analysis are attributed, 7 using the covalent bonding model, to In Cn and V Te , respectively. MORA 1 the literature where n-type CIT is produced by prolonged annealing of very thin sample in the presence of In.…”

Electrical and photoelectrical properties of chalcopyrite n‐AgInS2 crystals

“…1). Basing on the defect formation energies calculated by NEUMANN (1983aNEUMANN ( , 1983b we think that the deep donor level ED, is rather due to sulphur vacancy which is a very probable defect in this material. This proposition seems to be in agreement with the interpretation of the results for A"BV' (DEVLIN)) and CuInS, (UENG, HWANG,) compounds which are analogs of AgInS,.…”