Thermoelectric and thermal properties of GaAlAs Peltier-cooled laser diodes

Abstract

Analyses of heat spreading, temperature distribution, and resultant cooling effects in a monolithically Peltier-cooled laser (MPCL) structure are presented. The analyses were obtained by using Laplace's equation and were made under steady-state conditions, assuming constant thermal c.ondu.ctivity: In this MPCL structure a metal surface layer surrounds a heat-generating p-n laser JunctIon. It IS shown that by depositing relatively thick metallic cooling plates a 15% temperature reduction and 25% thermal spreading can be achieved. This heat spreading due to the passive cooling is added to the cooling obtained when the Peltier cooler is operated. Experimental measurements of the effect of Peltier cooling reveal a 6.8 °C reduction in junction temperature corresponding to a wavelength shift of as much as 20 A.

Thermal management for a micro semiconductor laser based on thermoelectric cooling

“…Todd Wey et al [19] used a thermoelectric cooler to control laser diode temperature. S. Hava et al [20] analyzed the heat spreading, temperature distribution, and resultant cooling effects in a monolithically Peltier-cooled laser (MPCL) structure. Novak et al [21] compared two alternative designs based on thermoelectric modules for a laser thermal management, and Limei Shen et al [22] developed a stepchanged cooling model to predict the thermal performance of an MTEM used for pulse laser cooling.…”

Pulsed electrodeposition of (Bi1-xSbx)2Te3 thermoelectric thin films

“…Thermoelectric cooling devices based upon the Peltier effect have been used for many years in many applications such as thermoelectric generators [1,2], coolers [3] and for optical storage systems [4]. Bismuth telluride represents the parent compound of a family of technologically important semiconductor alloys that are used extensively in modern thermoelectric coolers [5,6].…”

Electric and thermoelectric properties of electrodeposited bismuth telluride (Bi2Te3) films

“…2 Bismuth telluride and its solid solution films have been prepared by using a number of techniques, such as sputtering, 3 metal-organic chemicalvapor deposition, 4 molecular-beam epitaxy, 5 and electrodeposition. [6][7][8] The electrodeposition technique may offer a low cost growth method for a high-quality metal, alloy, and semiconductor films.…”