Thermodynamic analysis of Mg-doped p-type GaN semiconductor

Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films

“…This can be explained as follows: when the growth temperature increases, the quality of p-type AlGaN is improved and the density of defects, which can compensate the acceptor dopants, is reduced, thus, enhancing p-type conduction. But increasing the temperature will limit the incorporation of Mg atoms [15] . So, the acceptor density reduces and the resistivity is increased.…”

Applying TRIZ for Optimization Formulation of Sapphire Precision Lapping

“…Sapphire has a very excellent physical and chemical performance that applied in many areas of high precision and high-tech [1][2][3][4][5][6][7][8], such as optical electron, semiconductor, laser and so on. The face of sapphire after lapping must reach to highly smoothness, flatness and uniformity [9][10], however, the material characteristic of sapphire is hard and brittle which cause to such phenomenon as collapse in edge and crack during lapping in mass production.…”