Growth and electrical properties of high-quality Mg-doped p-type Al_0.2Ga_0.8N films

Abstract

The growth of high-performance Mg-doped p-type AlxGa1−xN (x = 0.2) using metal-organic chemical vapor deposition is reported. The influence of growth conditions (growth temperature, magnesium flow, and thermal annealing temperature) on the electrical properties of Mg-doped p-type AlxGa1−xN (x = 0.2) has been investigated. Using the optimized conditions, we obtained a minimum p-type resistivity of 0.71 Ω·cm for p-type AlGaN with 20% Al fraction.