Thermal Transport in Superlattice Castellated Field Effect Transistors

Middleton, Callum; Dalcanale, Stefano; Pomeroy, James W.; Uren, Michael J.; Chang, Josephine; Parke, Justin; Wathuthanthri, Ishan; Nagamatsu, Ken A.; Saluru, Sarat; Gupta, Shalini; Howell, Robert S.; Kuball, Martin

doi:10.1109/led.2019.2929424

Cited by 11 publications

(5 citation statements)

References 13 publications

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“…The possibility of thermal runaway-inducing the latching is explored in the supplementary material and found to be insignificant. Electro-thermal 3D simulations using ANSYS at the latching condition showed a temperature rise of 283 °C which is lower than that required to cause thermal breakdown in GaN-transistors [30][31][32]42 . Impact ionization if present at the latching condition would manifest in a bell-shaped IG-VGS plot [27][28] .…”

Section: Latching In Slcfetmentioning

confidence: 87%

GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope.

Kuball,

Shaji,

Dalcanale

et al. 2024

Preprint

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AlGaN/GaN-based Superlattice Castellated Field Effect Transistors (SLCFET) are the foundation for high power RF amplifiers and switches for future radars, although their reliability is not yet well understood. Transistor latching is observed in GaN transistors for the first time. At the latching condition, drain current (ID) transits from an OFF-State value to high ON-State value sharply with a slope less than 60 mV/decade. Current-voltage (I-V), simulations and correlated electroluminescent (EL) emission at the latching condition indicates that triggering of fin width dependent localized impact ionization is responsible for latching. This localization is attributed to the presence of fin width variation arising due to variability in the fabrication process. The reversible and non-degrading nature of the latching condition is promising for next generation RF applications.

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Section: Latching In Slcfetmentioning

confidence: 87%

GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope.

Kuball,

Shaji,

Dalcanale

et al. 2024

Preprint

Self Cite

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“…Many knowledge gaps exist in the fundamental electrical and thermal transport properties within multidimensional devices. For example, a strong thermal interaction between the 3D gate and multi-channel was recently revealed 101 and electric field mapping and imaging 102 are also desirable to help further visualize the electrostatics in multidimensional structures. From a material standpoint, the use of multidimensional architectures in UWBG devices promises a further performance leap, but the relevant demonstrations are still in their infancy.…”

Section: Discussionmentioning

confidence: 99%

Multidimensional device architectures for efficient power electronics

2022

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Power semiconductor devices are key to delivering high efficiency energy conversion in power electronics systems, which is critical towards efforts in reducing energy loss, cutting carbon dioxide emissions and creating more sustainable technology. While the use of wide or ultra-wide bandgap materials will be required in order to create improved power devices, multidimensional architectures can also improve performance, regardless of the underlying material technology. In particular, multidimensional device architectures -such as superjunction, multi-channel and multi-gate technologies -can enable advances in the speed, efficiency, and form factor of power electronics systems. Here we review the development of multidimensional device architectures for efficient power electronics. We explore the rationale for using multidimensional architectures and the different architectures available. We also consider the performance limits, scaling, and material figure-of-merits of the architectures, and identify key technological challenges that need to be addressed in order to realize the full potential of the approach.

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“…This is due to the high twodimensional electron gas (2DEG) density, mobility, saturation velocity, thermal conductivity, and high breakdown voltage compared to other semiconductors [1][2][3][4]. GaN Fin-FETs and single quantum-well based GaN trigate transistors have demonstrated enhanced gate controllability, high ON/OFF ratio, normally OFF-operation, high OFF-state BV (500 V), high linearity and low thermal resistance [5][6][7][8][9][10][11]. Recently, lateral GaN transistors with multiple quantum-wells stacked on top of each other, have received increasing attention due to higher electron density (up to 5 × 10 13 cm −2 ) and lower ON-resistance (R S < 80 Ω sq −1 ) than conventional HEMTs and GaN FinFETs [12].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

Shaji

Uren

Parke

et al. 2023

Semicond. Sci. Technol.

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Multichannel RF power amplifiers offer high frequency operation, high current and RF power, combined with excellent linearity. 3D and 2D simulation is used to investigate how changes in device architecture impact both the linearity and off-state reliability, allowing an improved linear design which does not compromise reliability. Linearity is assessed by extraction of gm 3 / gm '' , and third order intercept (TOI) as a function of gate bias, using a straightforward 2D approximation which is computation time and resource efficient compared to the full 3D simulation normally used for these devices. Off-state reliability is assumed to be linked to dielectric failure, and hence peak electric field as a measure of reliability is evaluated at gate corners and edges using a full 3D simulation. It is found that introducing a channel number-dependent doping in the AlGaN/GaN-based superlattice structure can be used to enable an improved transconductance–linearity. It is also found that there is a strong increase in TOI as gate dielectric thickness or fin width is increased. On the other hand, in order to maintain reliability, increased fin height is found to be essential in order to reduce electric field as dielectric thickness is increased. Finally, a device architecture for improving linearity, power and reliability is suggested

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Thermal Transport in Superlattice Castellated Field Effect Transistors

Cited by 11 publications

References 13 publications

GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope.

GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope.

Multidimensional device architectures for efficient power electronics

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

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