AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

Abstract

Multichannel RF power amplifiers offer high frequency operation, high current and RF power, combined with excellent linearity. 3D and 2D simulation is used to investigate how changes in device architecture impact both the linearity and off-state reliability, allowing an improved linear design which does not compromise reliability. Linearity is assessed by extraction of gm 3 / gm '' , and third order intercept (TOI) as a function of gate bias, using a straightforward 2D approximation which is computation time and resource efficient compared to the full 3D simulation normally used for these devices. Off-state reliability is assumed to be linked to dielectric failure, and hence peak electric field as a measure of reliability is evaluated at gate corners and edges using a full 3D simulation. It is found that introducing a channel number-dependent doping in the AlGaN/GaN-based superlattice structure can be used to enable an improved transconductance–linearity. It is also found that there is a strong increase in TOI as gate dielectric thickness or fin width is increased. On the other hand, in order to maintain reliability, increased fin height is found to be essential in order to reduce electric field as dielectric thickness is increased. Finally, a device architecture for improving linearity, power and reliability is suggested

GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope.

“…The multiple gm peaks in the ON-state (Fig. 1(b)) are attributed to the difference in response of the different 2DEG channels in the fin to the gate electric field 9,16 , ie top, sandwiched and bottom 2DEG channels. The subthreshold region of operation from Fig.…”