Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2

Hydrogen etching of GaN and its application to produce free-standing GaN thick films

“…It has been reported that H 2 enhances GaN decomposition; H and N atoms combine to form NH 3 [9][10][11][12][13]. As H mostly reacts with N, we presume that during H 2 etching, a facet formed with N atoms (N-terminated) will be unstable whereas a facet formed with Ga atoms (Ga-terminated) will be stable.…”

Influence of polarity on GaN thermal stability

“…[11]. Henceforth, the annealed samples will be referred to only by their polarity and not the particular growth technique for clarity.…”

“…This group previously reported a comparative thermal stability study of MOVPE versus HVPE GaN films [11]. The observed difference in stability is accounted for by the difference in polarity of films and not the particular growth technique.…”

Hydrogen etching on the surface of GaN for producing patterned structures

“…This is an investigation of the morphology of GaN etched in hydrogen (H 2 ) at high temperature. The body of literature comprises of studies on GaN decomposition in H 2 to understand the influence of H 2 during GaN growth [8][9][10]; surface morphology has not been investigated in detail. In order to examine the morphology, GaN has been etched in this study, where several profiles show the potential of H 2 etching for pattern producing.…”