Hydrogen etching on the surface of GaN for producing patterned structures

Yeh, Yen Hsien; Chen, Kuei Ming; Wu, Yung-Hsien; Hsu, Yung-Chang; Lee, Wei-I

doi:10.1016/j.jcrysgro.2010.10.063

Cited by 22 publications

(19 citation statements)

References 14 publications

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“…[9], the activation energy of the etching condition under pure H 2 at 40 and 76 Torr is 3.4 eV, and that under pure N 2 at 76 and 150 Torr is 3.62 eV; the activation energy under pure N 2 is larger. In our results, the activation energy under the high pressure of 700 Torr is larger than that of 100 Torr (the same H 2 /N 2 ratio), so we infer this result agrees with our hypothetical model that the bottom of the cavities is relatively a high V/III ration environment (without H 2 ) at high pressure and a H 2 environment at low pressure [8]. The sidewalls are unstable at high pressure, and then the lateral etching begins as the mechanism discussed in Ref.…”

Section: Resultssupporting

confidence: 89%

“…By comparing our previous study [8], it can be found that the effects of temperature are similar to those of pressure but with an opposite tendency, i.e., in the pressure-varying experiment, the etched surfaces are decorated with bollard-like posts at high pressures and with deep cavities at low pressures.…”

Section: Resultsmentioning

confidence: 69%

“…The sidewalls are unstable at high pressure, and then the lateral etching begins as the mechanism discussed in Ref. [8].…”

Section: Resultsmentioning

confidence: 99%

“…The third experiment was the overgrowth on a H 2 etched sample by HVPE. The H 2 -etching condition was a two-step etching that was described in our previous study [8]. After etching, a 320 mm-thick GaN layer was sequentially grown on the sample at 1050 1C under the high pressure of 700 Torr for 120 min, and the V/III ratio was 40.…”

Section: Methodsmentioning

confidence: 99%

“…In our previous work, the morphology of GaN etched in hydrogen (H 2 ) under different pressures had been studied [8]. A model was developed to explain the mechanism of H 2 etching under different pressures at 1050 1C.…”

Section: Introductionmentioning

confidence: 99%

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Hydrogen etching of GaN and its application to produce free-standing GaN thick films

Yeh

Chen

et al. 2011

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 69%

“…The sidewalls are unstable at high pressure, and then the lateral etching begins as the mechanism discussed in Ref. [8].…”

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hydrogen etching of GaN and its application to produce free-standing GaN thick films

Yeh

Chen

et al. 2011

Journal of Crystal Growth

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Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

et al. 2022

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Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high‐resolution transmission electron microscope (TEM) with in situ heating capability, the lattice‐asymmetry‐driven anisotropic sublimation behavior is demonstrated of wurtzite GaN: sublimation preferentially occurs along the [ ] and [0001] directions in both GaN thin films and nanowires. Hexagonal pyramidal nanostructures consisting of six semipolar planes and one (000 ) plane with the apex pointing to the [0001] direction are generated as a sublimation‐induced equilibrium crystal structure, which is consistent with the lattice‐asymmetry‐driven growth behaviors in wurtzite GaN. These findings offer a new insight into the thermal stability of wurtzite GaN and provide essential background for tailoring the structure of III‐nitrides for atomic‐scale manufacturing.

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Fabrication of InGaN/GaN MQW nano‐LEDs by hydrogen‐environment anisotropic thermal etching

Ogawa

Hachiya

Mizutani

et al. 2016

Physica Status Solidi (a)

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III‐nitride semiconductor nanostructures are attractive materials for the realization of high‐performance and highly functional optoelectronic devices. In this study, we fabricated InGaN/GaN multiple quantum well (MQW) nanostructured light‐emitting diodes (nano‐LEDs) using hydrogen‐environment anisotropic thermal etching (HEATE). HEATE is a low‐damage anisotropic etching technique that is based on the thermal decomposition of (In)GaN under a low‐pressure hydrogen environment. The InGaN/GaN MQW nano‐LEDs showed good rectification characteristics and blue emission without any post treatment to remove all etching damage. The narrowest MQW lateral sizes of successfully fabricated nanowall and nanopillar LEDs were 87 and 70 nm, respectively. These LEDs are among the smallest InGaN/GaN‐based nano‐LEDs fabricated via a top–down process. Electroluminescence images of InGaN/GaN nano‐LEDs operated at 3 V. (a) An a‐axis honeycomb nanowall, (b) an m‐axis nanowall array, (c) an a‐axis nanowall array, and (d) a nanopillar array.

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Hydrogen etching on the surface of GaN for producing patterned structures

Cited by 22 publications

References 14 publications

Hydrogen etching of GaN and its application to produce free-standing GaN thick films

Hydrogen etching of GaN and its application to produce free-standing GaN thick films

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Fabrication of InGaN/GaN MQW nano‐LEDs by hydrogen‐environment anisotropic thermal etching

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