Influence of polarity on GaN thermal stability

Mastro, M. A.; Kryliouk, O.; Anderson, Timothy J.; Davydov, Albert V.; Shapiro, Alexander J.

doi:10.1016/j.jcrysgro.2004.09.091

Cited by 42 publications

(18 citation statements)

References 20 publications

(28 reference statements)

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“…The etching reaction is not faster than the growth as can be concluded from the high deposition rates obtained in the experiments. However, the etching reaction is much faster in H 2 than in N 2 ambient [19]. Assuming step growth to be the dominant growth mechanism, etching will influence the most loosely bound atoms, i.e.…”

Section: Article In Pressmentioning

confidence: 99%

Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study

Dam¹,

Hageman²,

Larsen³

2005

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 99%

Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study

Dam¹,

Hageman²,

Larsen³

2005

Journal of Crystal Growth

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“…S4-5). During the experiment, when the temperature of the source reaches 800 1C, GaN molecules partially begin to sublimate 22 and some are adsorbed into the catalyst alloy droplet. Kucheyev S. O. et al 23 found out that when Au ions were implanted into GaN films, N 2 bubbles could be obtained due to the decomposition of GaN according to the following reaction:…”

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confidence: 99%

Synthesis and characterization of indium oxide nanobubbles with ultrathin single crystal shells

Xie

Wang

2009

Chem. Commun.

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“…Polarity is an inherent property of the wurtzite GaN lattice, which is known to determine a large number of properties such as surface reactivity and thermal stability [9,10]. However, there are no reports concerning the polarity influence on the GaN nanorod growth.…”

Section: Contributedmentioning

confidence: 99%

Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

Fündling

Wang

et al. 2011

Phys. Status Solidi C

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Selective area growth of GaN nanorods by metalorganic vapor phase epitaxy is highly demanding for novel applications in nano‐optoelectronic and nanophotonics. Recently, we report the successful selective area growth of GaN nanorods in a continuous‐flow mode. In this work, as examples, we show the morphology dependence of GaN rods with µm or sub‐µm in diameters on growth conditions. Firstly, we found that the nitridation time is critical for the growth, with an optimum from 90 to 180 seconds. This leads to more homogeneous N‐polar GaN rods growth. A higher temperature during GaN rod growth tends to increase the aspect ratio of the GaN rods. This is due to the enhanced surface diffusion of growth species. The V/III ratio is also an important parameter for the GaN rod growth. Its increase causes reduction of the aspect ratio of GaN rods, which could be explained by the relatively lower growth rate on (000‐1) N‐polar top surface than it on {1‐100} m‐planes by supplying more NH3 (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Influence of polarity on GaN thermal stability

Cited by 42 publications

References 20 publications

Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study

Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study

Synthesis and characterization of indium oxide nanobubbles with ultrathin single crystal shells

Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions

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