Thermal modeling of diamond-based power electronics packaging

Fabis, P. M.; Shum, David K. M.; Windischmann, H.

doi:10.1109/stherm.1999.762434

Cited by 61 publications

(23 citation statements)

References 3 publications

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“…Thus, junction temperature evaluation and thermal modeling with respect to the intended operating conditions are important in design to guarantee the service lifetime reliability [3][4]. As reported in [5], nearly 60% of failures in electronic systems are associated abnormal temperatures, and the failure rate is almost doubled for every 10⁰C increase of the junction temperature. However, it is difficult to know the actual junction temperature during operation and hence verify the model because of the sealed module packaging.…”

Section: Introductionmentioning

confidence: 99%

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Liao

Zeng

et al. 2017

IEEE Trans. Energy Convers.

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Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way.Publisher's statement: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP url' above for details on accessing the published version and note that access may require a subscription.

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Section: Introductionmentioning

confidence: 99%

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Liao

Zeng

et al. 2017

IEEE Trans. Energy Convers.

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“…Research has shown that 31% of power electronic conversion system breakdowns are attributable to the power device failure, and nearly 60% of device failures are thermally induced [5]. In addition, failure rate doubles for every 10℃ junction temperature increase [6]. It Copyright © 2015 IEEE.…”

Section: Introductionmentioning

confidence: 99%

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Luo

Chen

Sun

et al. 2015

IEEE Trans. Power Electron.

159

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Abstract -Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature extraction and prediction of power semiconductor devices. In this paper, the turn-off delay time is explored as an indicator of a TSEP to extract the junction temperature from high power insulated gate bipolar transistor (IGBT) modules. The parasitic inductor L eE between the Kelvin and power emitter terminals of an IGBT module is utilized to extract the turn-off delay time. Furthermore, the monotonic dependence between the junction temperature and turn-off delay time is investigated. The beginning and end point of the turn-off delay time can be determined by monitoring the induced voltage v eE across the inductor L eE . A dynamic switching characteristic test platform for high power IGBT modules is used to experimentally verify the theoretical analysis. The experimental results show that the dependency between IGBT junction temperature and turn-off delay time is near linear. It is established that the turn-off delay time is a viable TSEP with good linearity, fixed sensitivity and offers non-destruction on-line IGBT junction temperature extraction.Index Terms -Thermo-sensitive electrical parameter, high power IGBTs, on-line junction temperature extraction, turn-off delay time. I.0885-8993 (c) . His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peer-reviewed technical papers and holds over 30 issued/pending patents.Due to his excellent teaching and research contributions, Dr.

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“…Among major causes, the repetitive temperature swing account for the majority of long-term packaging-related wear-out failures. For every 10ºC increase in the operating environment, the failure rate is doubled [52].…”

Section: A Failure Mechanisms Of Wire Bondsmentioning

confidence: 99%

In Situ Diagnostics and Prognostics of Wire Bonding Faults in IGBT Modules for Electric Vehicle Drives

Pickert

Cao

et al. 2013

IEEE Trans. Power Electron.

276

122

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Abstract-ThisHowever, IGBTs are known to be prone to failure [12]-[19], and the situation would only get worse when operating in the harsh environment beneath the bonnet of an electric vehicle. ) have received much attention by the industry. Nonetheless, when the bonding using these new technologies fails, the entire device will be damaged with catastrophic consequences.Without a doubt, the detection of an IGBT fault prior to (prognosis) or even after (diagnosis) its occurrence is of critical importance to the healthy operation of the system. Conventional vehicles are equipped with an on-board diagnostic (OBD) system which can detect a "happened" fault and flag it up to the driver of the vehicle. In the event of an IGBT failure, the detection must be quick enough (ideally, less than 10 μs) to prevent a fault from propagating, which places a limit on the hardware setup

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Thermal modeling of diamond-based power electronics packaging

Cited by 61 publications

References 3 publications

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Thermal Coupling Analysis in a Multichip Paralleled IGBT Module for a DFIG Wind Turbine Power Converter

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

In Situ Diagnostics and Prognostics of Wire Bonding Faults in IGBT Modules for Electric Vehicle Drives

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