Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0)

Thermodynamic assessment of the Cu–Ge binary system

“…Transition metal (TM) germanides have attracted much attention in the high-speed complementary metal oxide semiconductor (CMOS) technology because of their low room-temperature resistivity, high thermal stability and good adherence to silicon substrates [1][2][3][4][5]. The germanides including Cu-Ge [1], Cr-Ge [2], Co-Ge [3], Ni-Ge [4] and Ti-Ge [5] have been considered recently in Ge-based CMOS to minimize the sheet resistance and to achieve low contact resistances on gate source and drain areas.…”

“…The germanides including Cu-Ge [1], Cr-Ge [2], Co-Ge [3], Ni-Ge [4] and Ti-Ge [5] have been considered recently in Ge-based CMOS to minimize the sheet resistance and to achieve low contact resistances on gate source and drain areas. Interface reactions between TM and Ge are critically important for the reliability of microelectronic devices.…”

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

“…Although in previous studies focus has been on the reactions of germanium with Pd [6,[14][15][16][17][18][19][20][21][22][23], Pt [6,13,22,[24][25][26][27][28][29], and Ni [6,9,11,[13][14][15][16]22,[28][29][30][31][32][33][34][35][36][37][38], so far there is very little literature on reactions of germanium with Ir [39]. Gaudet et al [6] carried out a systematic study of thermally induced reaction of 20 transition metals with Ge substrates.…”

“…Chawanda et al [28] investigated the change in the (I-V) electrical properties of Pt-, Ni-and Ti Schottky diodes on n-Ge (100) at different annealing temperatures. Their results reveal that the as-deposited barrier heights have values that are near the bandgap of Ge for Pt/-, Ni/-and Ti/n-Ge (100) Schottky diodes resulting in good Schottky source/drain contact materials in pchannel Ge-MOSFETS, for the hole injection from source into inverted p-channel [40].…”

A note on the reactions in the Ti-Ge system

“…Further, it has been claimed that this change in the contact behavior coincides with the temperature range for the formation of the Ti 5 Ge 3 phase. 3 For application of devices incorporating germanides in their structure understanding of the reactions occurring between the constituents of the germanides is essential for effective implementations of such devices. Formation of germanides in reaction couples of Ge with various thin metal films was reported by Witmer et al 4 Ti and Ni are representatives of metals which can be used to study these reactions.…”