Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

Abstract

Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process.Thermal stability of the Ir/n-Ge (100) was observed up to annealing temperature of 500 o C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures.Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (100) system occurs between 600-700 o C.

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“…This barrier controls the current flow, but it can be modulated with an external voltage. Furthermore, the Schottky barrier is also likely to be a function of the interface atomic structure, and atomic heterogeneities at the metal-semiconductor interface, as well as the operating temperature [ 50 , 51 ]. For example, dark currents increase at higher measurement temperatures.…”

Electrical Properties of the Al/CuInSe<sub>2</sub> Thin Film Schottky Junction

“…Thus, the annealing of the junction modifies the electrical properties in the layers. This can be attributed to the presence of the interfacial thin native oxide layer between the metal and semiconductor [50] or by the inter-diffusion between the metal layer and the CIS film and may be also due to the existence of a trap centers in the junction [51] [52]. In addition, the defects in semiconductor material play an important role as traps or as recombination centers depending on the capture cross section of the electrons and holes.…”

Characteristics of Al/Ge Schottky and ohmic contacts at low temperatures

“…Barrier height of metal/semiconductor Schottky contact can be reduced and transformed to Ohmic enough by annealing that creates an alloy between the semiconductor and the metal at the junction [22,23]. Post-metallization annealing in N 2 ambience of Al/p-Ge(100) junctions is found to be an effective means of controlling the Schottky barrier height [24].…”