Theoretical study ofGa2Se3,Ga2<

Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for GaxSey Materials

“…The treatment of L 1, 2 GaCl 2 with one equivalent of Li 2 Eo rL i 2 Se 4 (E = Se, Te generated in situ, see Scheme 1) yieldedt he N!Gacoordinated dimeric organogallium chalcogenides [L 1 Ga(m-Se)] 2 (1), [L 2 Ga(m-Se)] 2 (2), [L 1 Ga(m-Te)] 2 (3)a nd organogallium tetraselenide L 1 Ga(k 2 -Se 4 )( 4). In addition, complex 3 is sensitive to light and decomposest ot he unprecedented complex (L 1 Ga) 2 (m-Te 2 )(m-Te) (5).…”

“…[19] Neutral organometallic tetraselenide analogues of the main group elements are known,h owever.T okitho et al,r eported synthesiso ft etraselenagermolanes Tbt(Tip)Ge(k 2 -Se 4 )a nd stanolanes Tbt(Ditp)Sn(k 2 -Se 4 )( Tbt = 2,4,6-tris[bis(trimethylsilyl)methyl]phenyl, Ditp = 2,2''-diisopropyl-mterphenyl, Tip = 2,4,6-triisopropylphenyl). [20] While dimeric organogallium selenides 1-2 are stable, this is not the case for the parenttelluride 3.This complexissensitive to light and it rearranges to the unprecedented complex (L 1 Ga) 2 (m-Te 2 )(m-Te) (5), where the five membered Ga 2 Te 3 ring containst elluride Te 2À and ditelluride (Te 2 ) 2À fragments. Both Ga atoms in 5 are four-coordinated by nitrogen and carbon atom of the L 1 ligand and by two telluride atoms (the range of GaÀTe distances is 2.5423(6)-2.5872 (6) ).…”

“…Amorphous chalcogenide thin films are typically fabricated by the physical vapor deposition (PVD) methods . For GaE (E=Se, Te) materials, this method was used for synthesis of the hexagonal GaSe thin films, the production of 2D GaSe crystals, monolayers, nanoribbons, or nanosheets . Chemical vapor deposition (CVD) for GaE (E=Se, Te) synthesis is also possible, but the CVD method is strongly influenced by the character of the single source precursors (SSP).…”

“…PovRay presentationo fm olecular structures of L 1 Ga(k 2 -Se 4 )( 4)a nd (L 1 Ga) 2 (m-Te 2 )(m-Te)(5). Hydrogen and solvatemolecules are omitted.…”

Real Time Spectroscopic Ellipsometry Analysis of First Stage CuIn1−xGaxSe2 Growth: Indium-Gallium Selenide Co-Evaporation

“…From the temperature dependence of the free exciton photoluminescence feature, the room-temperature bandgap of γ-phase In 2 Se 3 films has been estimated as ~1.95 eV [43], whereas the bandgap of zinc blende Ga 2 Se 3 is estimated from absorption measurements as ~2.0 eV [44]. The wider bandgap of 2.19 eV in Table 2 for the In 2 Se 3 at 400 °C may be attributed to compositional differences and the narrower bandgap of 1.68 eV in Table 3 for Ga 2 Se 3 also at 400 °C may have components due to the red shift with temperature and to the defects and disorder of the Ga-rich alloys prepared in this study.…”