Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for Ga_xSe_y Materials

Abstract

Studies have been focused on the synthesis of N→Ga-coordinated organogallium selenides and tellurides [L Ga(μ-Se)] (1), [L Ga(μ-Se)] (2) and [L Ga(μ-Te)] (3), respectively, containing either N,C,N- or C,N-chelating ligands L (L is {2,6-(Me NCH ) C H } and L is {2-(Et NCH )-4,6-tBu -C H } ) having Ga/E (E=Se or Te) atoms in 1/1 ratio. To change the Ga/E ratio, an unusual N→Ga-coordinated organogallium tetraselenide L Ga(κ -Se ) (4) was prepared. An unprecedented complex (L Ga) (μ-Te )(μ-Te) (5), as the result of the non-stability of 3, was also isolated. Compound 2 is a suitable single-source precursor for the preparation of amorphous GaSe thin films by the spin coating. Moreover, simple heating of an octadecylamine solution of 2 provided, after work up, monoclinic Ga Se crystals with different crystallinity according to conditions used. Therefore, compound 2 may be also used as a source of Ga Se in the low-temperature doping process of Bi Se .

Synthesis and Application of Monomeric Chalcogenolates of 13 Group Elements

“…These values are little bit lower, but comparable to those found for amorphous GaSe thin films produced by vacuum evaporation (n ≈2.41 at λ =1.6 μm) noting that the chemical composition of the latter was probably richer in selenium content due to the fact that GaSe 9 starting material was used . Refractive index data obtained in this work are in agreement with our previous report ( n =1.96–2.26 at λ =1.5 μm) . Finally, compound 9 was used as SSPs for the preparation of InSe thin films by spin‐coating method on silicon substrate using 1000 and 1500 rpm.…”

“…Due to monomeric nature of 8 and 9 , compounds are highly soluble in propylamine (about 300 mg in 1 mL propylamine) and thus the concentrations up to 0.5 mol l −1 may be obtained. In comparison, amorphous GaSe thin films have been recently obtained from 0.06 mol l −1 propylamine solution of N→Ga coordinated organogallium selenides . The use of highly concentrated propylamine solution of 8 ( c =0.5 mol l −1 ) led to the preparation of GaSe thin films with poor quality by spin coating.…”

“…Later on, complexes [Me 2 M(SeP i Pr 2 ) 2 n ] (Figure B) and {M(μ‐Te)[N( i Pr 2 PTe) 2 ]} 3 (Figure C) were used for the deposition of cubic M 2 E 3 (E=Se, Te) thin films and the complexes GaCl 3⋅ ( n Bu 2 E) were applied in low pressure CVD (LP‐CVD) of crystalline Ga 2 E 3 . Our previous studies also showed that N→Ga coordinated chalcogenides [LGa(μ‐S)] 3 and [L 1 Ga(μ‐Se)] 2 (L={2,6‐(Me 2 NCH 2 ) 2 C 6 H 3 } − and L 1 ={2‐(Et 2 NCH 2 )‐4,6‐ t Bu 2 ‐C 6 H 2 } − ) (Figure D, E) can be exploited as SSPs for the deposition of III–VI amorphous thin films by spin coating method …”

(N),C,N‐Coordinated Heavier Group 13–15 Compounds: Synthesis, Structure and Applications

“…Similar chalcogenides [Ar CN *Ga(μ‐E)] 2 (E=S, Se) were prepared and the comparison of their structures with [Ar NCN Ga(μ‐S)] 3 and [Ar CN *Ga(μ‐S)] 2 clearly showed their dependence on the ligand used . Again, both compounds were used as SSP for thin layer depositions, but only complex [Ar CN *Ga(μ‐Se)] 2 has been shown to produce Ga 54.9 Se 45.1 thin layer (Figure a,b) …”

“…Low temperature degradation of [Ar CN *Ga(μ‐Se)] 2 provided either nanostructured Ga 2 Se 3 material or Ga doped Bi 2 Se 3 material …”