Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L Ga(μ-S)] (1) and [L Ga(μ-S)] (2) containing either N,C,N- or C,N-chelating ligands L or L (L is {2,6-(Me NCH ) C H } and L is {2-(Et NCH )-4,6-tBu -C H } ). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L Ga(κ -S ) (3) was prepared and the unprecedented complex [{2-[CH{(CH ) CH }(μ-OH)]-6-CH NMe }C H ]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.
Studies have been focused on the synthesis of N→Ga-coordinated organogallium selenides and tellurides [L Ga(μ-Se)] (1), [L Ga(μ-Se)] (2) and [L Ga(μ-Te)] (3), respectively, containing either N,C,N- or C,N-chelating ligands L (L is {2,6-(Me NCH ) C H } and L is {2-(Et NCH )-4,6-tBu -C H } ) having Ga/E (E=Se or Te) atoms in 1/1 ratio. To change the Ga/E ratio, an unusual N→Ga-coordinated organogallium tetraselenide L Ga(κ -Se ) (4) was prepared. An unprecedented complex (L Ga) (μ-Te )(μ-Te) (5), as the result of the non-stability of 3, was also isolated. Compound 2 is a suitable single-source precursor for the preparation of amorphous GaSe thin films by the spin coating. Moreover, simple heating of an octadecylamine solution of 2 provided, after work up, monoclinic Ga Se crystals with different crystallinity according to conditions used. Therefore, compound 2 may be also used as a source of Ga Se in the low-temperature doping process of Bi Se .
Utilization of the N,C,N‐chelating ligand L (L={2,6‐(Me2NCH2)2C6H3}−) in the chemistry of 13 group elements provided either N→In coordinated monomeric chalcogenides LIn(μ‐E4) (E=S, Se) with unprecedented InE4 inorganic ring or monomeric chalcogenolates LM(EPh)2 (M=Ga, In). Complex LGa(SePh)2 was selected as the most suitable single source precursor (SSP) for the deposition of amorphous semiconducting GaSe thin films using spin coating method.
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