Theoretical and experimental investigation of bias and temperature effects on high resistivity silicon substrates for RF applications

Abstract

Theoretical and experimental comparisons show that the RI? characteristics of the a CPW in Schottky contact with a HR Si substrate are bias independent for all practical temperatures, upto 100 "C. Bias dependence on the RF characteristics of the transmission line are noticed above 100 "C when the ohmic dielectric loss of the HR Si becomes the dominant loss mechanism on the coplanar structures under study. This is a direct result of the increase of intrinsic carrier density.