The objective of this paper is to establish understanding of the single/mu lti-mode oscillator circuits used In combiners A model Is developed with emphasis ontheselection and realization of the Input/output coefficients, optimum stabilizing and output loads, equalizing network synthesis and other cogent features.The application of this theory to the highly successful and efficient design of J-band pulsed oscillators is discussed.
SUMMARYThe need for higher and higher power pulsed, solid-state microwave oscillators is steadily expanding due to Increased complexity of radar, communication,countermeasures and fuzlng systems. Aswe all know, there is an aversion to using tubes/magnetrons for these applications because of excesswe size, weight, prime power and most of all poor reliabilityOne way to meet this demand is to continuously work the problem of increasing the output power and efficiency of the semiconductors and clrcults used to generate the microwave energy.
Silicon has many advantages as a microwave substrate material including low cost and a mature technology. The lower resistivity of Si (=lo k R-cm) compared to GaAs (=lo M R-cm) is perceived as a major disadvantage. In this paper, we present measured and simulated results demonstrating that the losses of a coplanar transmission line (CPW) realized on silicon substrates are comparable to the losses of a CPW realized on a GaAs substrate with insulators. The loss mechanisms of Si and GaAs substrates used for microwave applications are analyzed using both microwave and semiconductor physics theory. A high resistivity Si substrate can be used both as a microwave substrate and an active element carrier permitting futher integration at low cost.
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