Coplanar waveguides and microwave inductors on silicon substrates

Reyes, A.C.; El-Ghazaly, S.M.; Dorn, S.; Dydyk, M.; Schroder, D.K.; Patterson, H.

doi:10.1109/22.414534

Cited by 151 publications

(49 citation statements)

References 12 publications

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“…There have been numerous publications on spiral inductor design at microwave frequencies. Significant portion of the related work on spiral inductors is dedicated to design spiral inductors at microwave frequencies using substrates such as Silicon (Si) [1][2][3][4][5] or gallium-arsenide (GaAs) [6][7][8]. A modeling technique using time domain (TD) impulse to characterize microwave spiral inductors is proposed in [9].…”

Section: Introductionmentioning

confidence: 99%

Planar Inductor Design for High Power Applications

Eroğlu

2011

PIER B

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Abstract-Design, simulation, and implementation of low profile microstrip spiral inductors for high power Industrial, Scientific and Medical (ISM) applications at the high frequency (HF-3-30 MHz) range are given for the first time. An accurate analytical model and algorithm have been developed to determine the simplified lumped element equivalent model parameters for spiral inductor and its physical dimensions. Five different spiral inductors are then simulated with a planar electromagnetic simulator using the physical dimensions obtained for the desired inductance values with the analytical method. The implementation method and substrate selection for spiral inductors at the HF range are given in detail for high power applications. The spiral inductors are then constructed on 100 mil Alumina substrate and measured with network analyzer. It is found that analytical, simulation and measurement results are in close agreement and the analytical method and algorithm that have been developed can be used to accurately determine the physical dimensions, and the resonant frequency of the spiral inductor for the desired inductance value.

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Section: Introductionmentioning

confidence: 99%

Planar Inductor Design for High Power Applications

Eroğlu

2011

PIER B

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“…Measurements [12], [13] have shown that high-resistivity silicon is nearly as good a substrate for microwave and millimeter-wave MMIC's as GaAs and InP [14].…”

Section: A Effective Permittivitymentioning

confidence: 99%

“…As a material with mature technology, silicon is increasingly used for higher frequencies as well, both on standard silicon (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) cm) as well as on high-resistivity silicon ( 1000 cm) [1], [2], [17].…”

Section: Onolithic Microwave Integrated Circuits (Mmic's)mentioning

confidence: 99%

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Transmission lines and passive elements for multilayer coplanar circuits on silicon

Warns

Menzel

Schumacher

1998

IEEE Trans. Microwave Theory Techn.

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Abstract-In this paper, propagation properties of both standard and multilayer coplanar lines on different types of silicon substrates, as well as a number of quasi-lumped and stub-type circuit elements, are investigated. For the transmission lines, emphasis is placed on losses. As examples for circuit elements, a lumped parallel resonator and a high-low impedance low-pass filter are demonstrated.

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“…The resistivity can be increased and the electromagnetic field attenuation can be mitigated by using high resistivity Si substrates (> 3 kΩ·cm). Surface passivation can further reduce RF signal losses into the substrate [135,136].…”

Section: Substratementioning

confidence: 99%

Thin fim barium strontium titanate capacitors for tunable RF frond-end applications

Tiggelman¹

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Coplanar waveguides and microwave inductors on silicon substrates

Cited by 151 publications

References 12 publications

Planar Inductor Design for High Power Applications

Planar Inductor Design for High Power Applications

Transmission lines and passive elements for multilayer coplanar circuits on silicon

Thin fim barium strontium titanate capacitors for tunable RF frond-end applications

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