Silicon as a microwave substrate

Reyes, A.C.; El-Ghazaly, S.M.; Dorn, S.; Dydyk, M.; Schroder, D.K.

doi:10.1109/mwsym.1994.335101

Cited by 59 publications

(22 citation statements)

References 7 publications

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“…As a material with mature technology, silicon is increasingly used for higher frequencies as well, both on standard silicon (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) cm) as well as on high-resistivity silicon ( 1000 cm) [1], [2], [17].…”

Section: Onolithic Microwave Integrated Circuits (Mmic's)mentioning

confidence: 99%

“…Measurements [12], [13] have shown that high-resistivity silicon is nearly as good a substrate for microwave and millimeter-wave MMIC's as GaAs and InP [14].…”

Section: A Effective Permittivitymentioning

confidence: 99%

“…Standard silicon with a resistivity of [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] cm is used in conventional silicon processes. It is also interesting for silicon MMIC's at higher frequencies because of lower cost.…”

Section: Standard Siliconmentioning

confidence: 99%

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Transmission lines and passive elements for multilayer coplanar circuits on silicon

Warns

Menzel

Schumacher

1998

IEEE Trans. Microwave Theory Techn.

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Abstract-In this paper, propagation properties of both standard and multilayer coplanar lines on different types of silicon substrates, as well as a number of quasi-lumped and stub-type circuit elements, are investigated. For the transmission lines, emphasis is placed on losses. As examples for circuit elements, a lumped parallel resonator and a high-low impedance low-pass filter are demonstrated.

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Section: Onolithic Microwave Integrated Circuits (Mmic's)mentioning

confidence: 99%

“…Measurements [12], [13] have shown that high-resistivity silicon is nearly as good a substrate for microwave and millimeter-wave MMIC's as GaAs and InP [14].…”

Section: A Effective Permittivitymentioning

confidence: 99%

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Transmission lines and passive elements for multilayer coplanar circuits on silicon

Warns

Menzel

Schumacher

1998

IEEE Trans. Microwave Theory Techn.

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“…At higher frequency (>16 GHz) the divergence between the two methods seems to increase. One may point out the dielectric loss influence within the low resistive regions (highly doped regions) as a possible candidate for such a difference [128]. Still, we may say that both methods are in reasonably good agreement within the error margin.…”

Section: Small Signal Rf Measurementsmentioning

confidence: 97%

Towards Compact and High Speed Silicon Modulators

Brimont¹,

Jacques²

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i Preface "Photonics" is the field of science that involves the manipulation of light, i.e. photons. A photon is the smallest quantity (quantum) of electromagnetic radiation and has neither mass nor electric charge. The idea of using coherent light beams for the good of society emerged in the 60's by creating the first semiconductor laser, then followed by the first optical fiber and erbium doped fiber amplifier in the 70's. At the beginning of the 80's, the term "photonics" became commonly used among the scientific community and the combination of efficient light emitters, optical modulators, amplifiers, switches, optical fibers and detectors, paved the way for the late 20 th century telecommunication revolution:the Internet. Meanwhile, photonics has also been showing great success in many other fields of applications such as high power lasers, biological and chemical sensing, medical diagnosis and therapy as well as display devices and therefore gathers many different aspects in terms of optical engineering applications. In the 90's and at the beginning of the 21 st century, two prefixes, "micro" and "nano", were successively added to this word. They basically arise from the fact that light can be manipulated at micro-and more recently nano-scale owing to the ceaseless progress in nanofabrication tool development. As a result, photonic components, so far discretely fabricated and assembled, are on the verge of experiencing drastic changes by being integrated monolithically onto miniature integrated chips due to their ever decreasing footprints. Although it is widely accepted that III-V compounds, owing to their superior optical properties for light emission, modulation and detection, are materials of choice for such a purpose, silicon, known as the fundamental material of electronics, was proposed in the early 90's as an alternative photonic material despite its relatively poor active opticalproperties. Therefore, a natural question arises: why exploring silicon photonics?First, because silicon is transparent in the near-infrared range, and is consequently a good candidate for short-range telecommunication wavelength ii guidance. Moreover, it is the second most abundant element in Earth's crust after oxygen and finally, it is far cheaper and easier to process than its III-V counterparts. However, then, why would one want to confine and control photons on silicon chips if electrons have successfully fulfilled their role so far, enabling us to enjoy our modern "electronic way of life"? The answer to this is that the electronic roadmap is not expected to be eternally following Moore's law and silicon chips will sooner or later require, at least in the mid-term, some added functionalities that could likely be provided by monolithically integrated photonic devices. The idea behind this is to benefit from the well established maturity of silicon-based electronics and realize similar/complementary functions so electrons and photons could function in harmony on small, inexpensive, energy efficient and fast silicon chi...

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“…Till now, many researchers [2]- [8] have proposed models referring to the different "modes" or mechanisms of propagation [3]- [8] for the tfansmission lines on silicon substrate, and the slow-wave mode is shown in [7] to be a quasi-TEM mode by adequately describing the transmission lines with €UGC model [5]. It was further shown in [9] that the frequency dependent RLGC model derived from general theory of waveguides to be an exact description of a quasi-TEM transmission line.…”

Section: Introductionmentioning

confidence: 99%

Characterization of coplanar waveguides on MCM-D silicon substrate

Liu

Lin²,

Kooi³

et al.

1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473)

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This paper presents the characteristics of the coplanar waveguides (GPW) on silicon substrate fabricated through MCM-D process. The propagation constant and characteristic impedance are measured at frequencies from 0.05 GHz to 10.05 GHz, using a vector analyzer, and with LRRM on-wafer calibration techniques followed with deembedding procedure. Two quasi-TEM models are developed to account for the EM affects in the CPW structure: the distributed equivalent elements RLGC were modeled by both closed-form approximation and fully lumped-equivalent circuits. The calculated characteristics show good agreement with the measured ones. The proposed models should be useful for the analysis and design of IZFIC on silicon.

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Silicon as a microwave substrate

Cited by 59 publications

References 7 publications

Transmission lines and passive elements for multilayer coplanar circuits on silicon

Transmission lines and passive elements for multilayer coplanar circuits on silicon

Towards Compact and High Speed Silicon Modulators

Characterization of coplanar waveguides on MCM-D silicon substrate

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