Review of add-on process modules for high-frequency silicon technology

Burghartz, Joachim N.

doi:10.1016/j.microrel.2004.12.002

Cited by 2 publications

(1 citation statement)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The solution would be to amorphize the surface by argon implantation or by the deposition of amorphous materials. It has been shown that Q factors are improved with the amorphization of the interface [23]. …”

Section: Resultsmentioning

confidence: 99%

RF performances of inductors integrated on localized p+-type porous silicon regions

et al. 2012

View full text Add to dashboard Cite

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate.

show abstract

Section: Resultsmentioning

confidence: 99%