The TFT A New Thin-Film Transistor

Weimer, P.K.

doi:10.1109/jrproc.1962.288190

Cited by 264 publications

(85 citation statements)

References 15 publications

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“…At V DS ) -2 V, the Au/CdS/Au@(SiO 2 ) 10 devices have an ON/OFF current ratio of 10 3 , a threshold voltage of 2.4 V, and a subthreshold slope of 2.2 V/decade (Figure 3d, traces 1 and 3). The Au/CdS/AgAu@(SiO 2 ) 14 devices show similar parameters at V DS ) -0.2 V and a gate sweep from 0 to 10 V. While the in-wire TFTs can operate at relatively low drain voltages, the above parameters are superior to those found with planar CdS 13 and nanocrystalderived CdSe 14a TFTs in the gate voltage range (9-10 V. The lower V T and a 3-fold decrease in the subthreshold slope (S) relative to planar nanocrystal-derived CdSe TFTs (S ) 7-10 V/decade 14a ) may result from the thinner dielectric layer and coaxial gating. A similar tendency was predicted for planar double-gated vs conventional FETs.…”

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confidence: 82%

“…This is 4-6 orders of magnitude lower than that found for TFTs with several-micrometer-long channels of planar nanocrystal-derived and vapor-deposited CdSe and CdS. 13,14 To a certain extent, this decrease may be caused by the significant reduction of the channel length in the in-wire TFTs. The field-dependent mobility decrease is a predicted consequence of FET channel scaling.…”

mentioning

confidence: 85%

“…However, the metal/semiconductor contacts of the in-wire TFTs are still much more resistive than those of planar TFTs. 13,14 This implies a stronger effect of the contact resistance on the nanowire device properties. Therefore, all characteristics described below result from a field effect on both the CdS channel and Au(Ag)/CdS contacts.…”

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confidence: 99%

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Coaxially Gated In-Wire Thin-Film Transistors Made by Template Assembly

2004

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Nanowire field effect transistors were prepared by a wet chemical template replication method using anodic aluminum oxide membranes. The membrane pores were first lined with a thin SiO2 layer by the surface sol−gel method. Au, CdS (or CdSe), and Au wire segments were then sequentially electrodeposited within the pores, and the resulting nanowires were released by dissolution of the membrane. Electrofluidic alignment of these nanowires between source and drain leads and evaporation of gold over the central CdS (CdSe) stripe affords a “wrap-around gate” structure. At V DS = −2 V, the Au/CdS/Au devices had an ON/OFF current ratio of 103, a threshold voltage of 2.4 V, and a subthreshold slope of 2.2 V/decade. A 3-fold decrease in the subthreshold slope relative to that of planar nanocrystalline CdSe devices can be attributed to coaxial gating. The control of dimensions afforded by template synthesis should make it possible to reduce the gate dielectric thickness, channel length, and diameter of the semiconductor segment to sublithographic dimensions while retaining the simplicity of the wet chemical synthetic method.

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Coaxially Gated In-Wire Thin-Film Transistors Made by Template Assembly

2004

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“…Even if TFTs and FETs share the same operating principle, the first TFT was realized only in 1962 by Weimer at RCA laboratory. 45 In his work, Weimer used a vacuum technique (evaporation) and high-precision shadow masking to deposit and structure a gold (Au) source/drain (S/D) electrodes, a microcrystalline cadmium sulfide (CdS) n-type (electron conducting) semiconductor, a silicon monoxide gate dielectric, and an Au gate contact on an insulating glass substrate (Fig. 1).…”

Section: A Historical Perspectivementioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

550

430

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“…In 1962, Weimer first introduced the concept of the thin-film transistor (TFT) [29]. This structure is well adapted to low conductivity materials and is currently used in amorphous silicon …”

Section: Organic Field-effect Transistors 31 Basic Principles Of Fimentioning

confidence: 99%

Organic Field-Effect Transistor: Device Physics, Materials, and Process

Chang¹,

Lin²,

Zhang³

et al. 2017

Different Types of Field-Effect Transistors - Theory and Applications

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Organic field-effect transistors have received much attention in the area of low cost, large area, flexible, and printable electronic devices. Lots of efforts have been devoted to achieve comparable device performance with high charge carrier mobility and good air stability. Meanwhile, in order to reduce the fabrication costs, simple fabrication conditions such as the printing techniques have been frequently used. Apart from device optimization, developing novel organic semiconductor materials and using thin-film alignment techniques are other ways to achieve high-performance devices and functional device applications. It is expected that by combining proper organic semiconductor materials and appropriate fabrication techniques, high-performance devices for various applications could be obtained. In this chapter, the organic field-effect transistor in terms of device physics, organic materials, device process, and various thin-film alignment techniques will be discussed.

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The TFT A New Thin-Film Transistor

Cited by 264 publications

References 15 publications

Coaxially Gated In-Wire Thin-Film Transistors Made by Template Assembly

Coaxially Gated In-Wire Thin-Film Transistors Made by Template Assembly

Metal oxide semiconductor thin-film transistors for flexible electronics

Organic Field-Effect Transistor: Device Physics, Materials, and Process

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