Organic Field-Effect Transistor: Device Physics, Materials, and Process

Abstract

Organic field-effect transistors have received much attention in the area of low cost, large area, flexible, and printable electronic devices. Lots of efforts have been devoted to achieve comparable device performance with high charge carrier mobility and good air stability. Meanwhile, in order to reduce the fabrication costs, simple fabrication conditions such as the printing techniques have been frequently used. Apart from device optimization, developing novel organic semiconductor materials and using thin-film alignment techniques are other ways to achieve high-performance devices and functional device applications. It is expected that by combining proper organic semiconductor materials and appropriate fabrication techniques, high-performance devices for various applications could be obtained. In this chapter, the organic field-effect transistor in terms of device physics, organic materials, device process, and various thin-film alignment techniques will be discussed.

Hydrogen Bonds Control Single-Chain Conformation, Crystallinity, and Electron Transport in Isoelectronic Diketopyrrolopyrrole Copolymers

“…Semiconducting conjugated polymers have attracted considerable attention for numerous applications in economically beneficial, lightweight, flexible, and large-area organic electronic devices, owing to their tunable chemical structure, low-cost high-throughput production, and robust mechanical properties. − Among various organic electronic devices, organic field-effect transistors (OFETs) are of special importance as these are the basic elements of flexible displays, sensors, skin electronics, and radio frequency identification tags. , According to the nature of the dominant charge carriers transported in the transistor channel, semiconducting polymers applied to OFETs can be classified as p-type, n-type, and ambipolar. , Extensive synthetic studies have enabled hole transporting polymers with state-of-the-art hole mobilities over 10 cm 2 V –1 s –1 , which surpass those of amorphous silicon-based transistors . In comparison to their p-type counterparts, the development of high mobility n-type polymers has seen great progress recently, but is still limited to relatively few examples having electron mobilities > 5 cm 2 V –1 s –1 . ,− Electron transporting polymers are indispensable components for all-polymer solar cells, complementary analog and logic circuits, and organic thermoelectrics. ,− Hence, the design of high-performance n-type semiconducting polymers and the elucidation of their detailed structure–function relationships by using advanced techniques remain important research topics that are expected to influence further progress in this area.…”

“…5,6 According to the nature of the dominant charge carriers transported in the transistor channel, semiconducting polymers applied to OFETs can be classified as p-type, n-type, and ambipolar. 7,8 Extensive synthetic studies have enabled hole transporting polymers with state-of-the-art hole mobilities over 10 cm 2 V −1 s −1 , which surpass those of amorphous siliconbased transistors. 9 In comparison to their p-type counterparts, the development of high mobility n-type polymers has seen great progress recently, but is still limited to relatively few examples having electron mobilities > 5 cm 2 V −1 s −1 .…”

Исследование Подвижности Носителей Заряда В Слоях Нанокристаллов PBS Методом Полевого Транзистора

“…Пороговое напряжение V th (threshold voltage) соответствует окончанию зоны экспоненциального роста тока на передаточной характеристике, а напряжение начала экспоненциального роста тока называют начальным напряжением (onset voltage) V on , оно соответствует началу образования канала. Величина значений V on и V th зависит от разных эффектов (интерфейсные состояния, ловушки и дипольные состояния, примеси [13]). Чаще всего причиной ненулевого напряжения включения являются заряженные ловушечные состояния на интерфейсе с диэлектриком [14].…”

“…Чаще всего причиной ненулевого напряжения включения являются заряженные ловушечные состояния на интерфейсе с диэлектриком [14]. Существенный сдвиг напряжения включения может быть вызван, например, поляризацией диэлектрика и проявляться в виде гистерезиса [13].…”

Investigation of the Origin of High Photoluminescence Quantum Yield in Thienyl-S,S-dioxide AIEgens Oligomers by Temperature Dependent Optical Spectroscopy

“…Organic conjugated molecules, both oligomers and polymers, are receiving large research attention in the last decades, both for fundamental and applicative interest. In particular, the capability to combine the typical active properties of semiconductors with the chemical flexibility and easy processability of plastic materials has opened the way to a wide range of possible applications of conjugated molecules, including solar cells [ 1 ], photodetectors [ 2 ], Field Effect Transistors (FETs) [ 3 ], Light Emitting Diodes (LEDs) [ 4 ], LASER [ 5 , 6 ], sensors [ 7 , 8 , 9 ], and biomarkers [ 10 ].…”