NiOx hole transporting layer has been extensively studied in optoelectronic devices. In this paper, the low temperature, solution–combustion‐based method is employed to prepare the NiOx hole transporting layer. The resulting NiOx thin films show better quality and preferable energy alignment with perovskite thin film compared to high temperature sol–gel‐processed NiOx. With this, high‐performance perovskite solar cells are fabricated successfully with power conversion efficiency exceeding 20% using a modified two‐step prepared MA1−yFAyPbI3−xClx perovskite. This efficiency value is among the highest values for NiOx‐based devices. Various characterizations and analyses provide evidence of better film quality, enhanced charge transport and extraction, and suppressed charge recombination. Meanwhile, the device exhibits much better device stability compared to sol–gel‐processed NiOx and poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)‐based devices.
In this work, a simple and efficient method for the extraction of all the parameters of a solar cell from a single current-voltage (I-V) curve under the constant illumination level is proposed. With the help of the Lambert W function, the explicit analytic expression for I is obtained. By reducing the number of the parameters, the expression for I only depends on the ideality factor n, the series resistance R s , and the shunt resistance R sh. This analytic expression is directly used to fit the experimental data and extract the device parameters. This simple solar cell parameter extraction method can be directly applied for all kinds of solar cells whose I-V characteristics follow the single-diode model. The parameters of various solar devices including silicon solar cells, silicon solar modules, dye-sensitized solar cells, and organic solar cells with standalone, tandem, and multi-junction structures have been successfully extracted by using our proposed method.
Recent research shows that the interface state in perovskite solar cells is the main factor which affects the stability and performance of the device, and interface engineering including strain engineering is an effective method to solve this issue. In this work, a CsBr buffer layer is inserted between NiOx hole transport layer and perovskite layer to relieve the lattice mismatch induced interface stress and induce more ordered crystal growth. The experimental and theoretical results show that the addition of the CsBr buffer layer optimizes the interface between the perovskite absorber layer and the NiOx hole transport layer, reduces interface defects and traps, and enhances the hole extraction/transfer. The experimental results show that the power conversion efficiency of optimal device reaches up to 19.7% which is significantly higher than the efficiency of the device without the CsBr buffer layer. Meanwhile, the device stability is also improved. This work provides a deep understanding of the NiOx/perovskite interface and provides a new strategy for interface optimization.
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