The structure and electrical properties of the electroformed MIM structure

Thurstans, R.E.

doi:10.1016/0040-6090(79)90421-8

Cited by 11 publications

(3 citation statements)

References 6 publications

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“…In region 1 (<0.1 V), the structure is expected to be at its most stable. At low bias and temperature, the current is governed by activated tunnelling as experiments by Thurstans [4] have shown. To date, there is no other model that explains these results.…”

Section: Discussionmentioning

confidence: 96%

“…Our I, V data, recorded under high vacuum conditions, are shown in figure 2 between 20 and 50 K and there is no discernible change up to 300 K. This indicates that the variation in conductivity, when negligible oxygen is present, is less than about 1% over this temperature range, which is clearly indicative of a current transport mechanism with a low activation energy. Further investigations by Thurstans [4] of the I, V relationship at low bias and temperature show that the differential resistance (dV /dI ) versus bias V exhibits a so-called zero-bias anomaly; see figure 3. When the natural logarithm of the conductivity is plotted against the reciprocal of absolute temperature, an activation energy of around 2 meV is given.…”

Section: Low-bias Current-voltage Characteristicmentioning

confidence: 96%

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The electroformed metal-insulator-metal structure: a comprehensive model

Thurstans

Oxley

2002

J. Phys. D: Appl. Phys.

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A new model is presented of the electroformed metal-insulator-metal structure which explains its various properties including electron emission, electroluminescence, memory effects and, for the first time, a complete account of the differential negative resistance. The model is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunnelling between metal islands produced in the forming process. The implications for the production of commercial electroformed devices are discussed.

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Section: Discussionmentioning

confidence: 96%

Section: Low-bias Current-voltage Characteristicmentioning

confidence: 96%

The electroformed metal-insulator-metal structure: a comprehensive model

Thurstans

Oxley

2002

J. Phys. D: Appl. Phys.

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“…One current point of view is that the filamentary material condenses from the residual vapours from the pump oils in the vacuum system (Pagnia et al 1985, Borbonus et al 1987, Pagnia and Sotnik 1988 whilst other points of view are that filament formation is the result of the diffusion of material directly from the anode (Rahman 1982, Bernede 1985. Thurstans (1979) has pointed out that sandwich devices display low temperature characteristics indicative of tunnelling between metal islands and hence suggests that the filamentary path itself is discontinuous in nature.…”

Section: Introductionmentioning

confidence: 97%

Measurement techniques in MIM device characterization

Dunne

Collins

1990

International Journal of Electronics

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A direct experimental comparison is made between current-voltage characteristics for electroformed MIM sandwich devices obtained using a 4-terminal measuring system and those obtained using a 2-terminal technique. The results indicate that ?-terminal results, which occur regularly in this field of study, cannot be safely used to make either qualitative or quantitative comparisons with theory. It is further suggested that edge thickening layers, commonly employed in these device structures to eliminate edge effects, can significantly affect the device characteristics.

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Memory Effect and Negative Differential Resistance by Electrode‐ Induced Two‐Dimensional Single‐ Electron Tunneling in Molecular and Organic Electronic Devices

et al. 2005

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Beyond the demonstration of single-molecule (or singleatom) and organic-thin-film transistors, [1±4] a reliable electrode contact remains one of the most critical challenges in the development of molecular and organic electronics. Except for the tip of a scanning tunneling microscope, [5±7] more practical connections often involve a metal/ insulator(semiconductor)/metal thin-film structure, either through a gate thin-film dielectric assembly below the source±drain, [1±4] or a insulating thin-film separator which runs parallel to the molecular path. [8,9] To achieve practical applications, not only does one need ohmic contacts so that any nonlinearity can be correctly attributed, but also a much more insulating medium to minimize the influence from the surroundings.[10] However, one often encounters unexpected current±voltage characteristics which do not arise from the given atoms or molecules. For example, negative differential resistance (NDR) [11±15] and the memory effect (hysteresis) [16±21] were found not only in singlemolecule devices, but also in organic thin-film transistors, organic light-emitting devices, and metal/inorganic insulator/ metal systems.[22±26] Despite many years of effort, the precise origin of the phenomena remains unknown, which has become a major obstacle in the research and development of new electronic devices. In this report, we try to reveal the origin of such phenomena, based on new experiment results from various metals and both organic and polymeric thin films. The answer is surprisingly found to be two-dimensional (2D) single-electron tunneling due to nanometer-sized metal islands, which were manifested unexpectedly through a wellknown process where some nuclei were blocked from further growth by the sealing of electrode outside crevices. The results not only provide a satisfactory explanation of the anomalous phenomena, but also open a new door to the construction and fabrication of molecular electronic and memory devices.The widespread nature of the phenomena is shown by its easy duplication, using any metal electrode and any organic or inorganic thin-film insulator, or even semiconductors, since the anomalous current is usually several orders of magnitude higher than that of the nominal conductance. The typical current±voltage (I±V) curve showing NDR and a memory effect has two distinctive features. One is a local current maximum (when V = V max ), followed by a region of NDR. The other feature is the dual states for V < V max , where the ªonº state is obtained by reaching the V max first, and the ªoffº state is recovered by visiting a voltage beyond NDR before rapidly setting back to zero.[21] In addition, there are intermediate states available, [21,22] and the phenomena could be removed by exposure to oxygen gas. [13] Many models have been proposed, but so far none offers a satisfactory explanation. The arbitrary choice of metals and insulators of various energies immediately rejects any speculation related to, for example, a particular type of insulating or semiconduc...

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The structure and electrical properties of the electroformed MIM structure

Cited by 11 publications

References 6 publications

The electroformed metal-insulator-metal structure: a comprehensive model

The electroformed metal-insulator-metal structure: a comprehensive model

Measurement techniques in MIM device characterization

Memory Effect and Negative Differential Resistance by Electrode‐ Induced Two‐Dimensional Single‐ Electron Tunneling in Molecular and Organic Electronic Devices

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