The electroformed metal-insulator-metal structure: a comprehensive model

Abstract

A new model is presented of the electroformed metal-insulator-metal structure which explains its various properties including electron emission, electroluminescence, memory effects and, for the first time, a complete account of the differential negative resistance. The model is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunnelling between metal islands produced in the forming process. The implications for the production of commercial electroformed devices are discussed.

Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

“…At present, the nature and formation of these filaments is not clear. Several models for the switching have been proposed such as metal filaments that rupture locally by Joule heating, [9,10] or trap controlled tunneling between metal islands [11].…”

Electronic memory effects in diodes from a zinc oxide nanoparticle-polystyrene hybrid material

“…ZnO was chosen because this material is known to exhibit memory effects in bulk conduction, 6,7 an effect which is also known for many other metal oxides. 8,9 Our diodes consist of a spin coated active layer between two electrodes ͑Fig. 1͒.…”

Charged Particle Ejection from Nanolayered Heterostructures

“…In contrast to the filamentary conduction mechanism, Thurstans and Oxley have proposed that the forming process creates metallic islands in the insulator, and the electron transport in the device is mediated through activated tunneling mechanism between metallic islands. 9 Some groups have focused their study on vacuum emission and proposed mechanistic differences between emission occurring from formed versus non-formed sites in the MIM cold cathode.' 2 " 3 In our study presented in this report, we have characterized the performance of Au-SiO,-Au cold cathodes.…”

“…In addition to the experimental studies described here, several theoretical studies have considered the role of trap states in the insulator and discussed the current-voltage characteristics for MIM structures. 2 23 In another study on a related system, the current noise in AI/A1 2 0 3 /Au sandwiches, with 17 nm thick A1 2 0 3 film in each MIM structure, was studied by Ot'fidal et al' 9 The study revealed that the fluctuations of emission and leakage (conduction) current were not correlated, and an analysis of the fluctuations in leakage current indicated space charge fluctuations in the insulator as the noise source. The challenges in identifying the electron transport mechanism in MIM device is evident in the study by Sharpe and Palmer'O who suggested different transport mechanisms in Cu-SiOx-Cu devices for low versus high field regime by trying curve fits for a large number of possible mechanisms.…”