Electronic memory effects in diodes from a zinc oxide nanoparticle-polystyrene hybrid material

Verbakel, Frank; Meskers, Stefan C. J.; Janssen, Raj René

doi:10.1063/1.2345612

Cited by 143 publications

(126 citation statements)

References 24 publications

(15 reference statements)

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“…Because the devices are unpassivated and measured in atmosphere, it could be argued that oxygen from the ambient may be interacting with the oxide [46] during formation in a similar manner to the device in reference [46]. Calcia-stabilized-zirconia sandwiched between two porous Pt electrodes has been used as an oxygen sensor and demonstrated to pump oxygen from air into the sandwich structure at elevated temperatures over 500…”

Section: Resultsmentioning

confidence: 99%

The mechanism of electroforming of metal oxide memristive switches

et al. 2009

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Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating, oxides can change behavior under high electric fields-through 'electroforming' or 'breakdown'-critically affecting CMOS (complementary metal-oxide-semiconductor) logic, DRAM (dynamic random access memory) and flash memory, and tunnel barrier oxides. An initial irreversible electroforming process has been invariably required for obtaining metal oxide resistance switches, which may open urgently needed new avenues for advanced computer memory and logic circuits including ultra-dense non-volatile random access memory (NVRAM) and adaptive neuromorphic logic circuits. This electrical switching arises from the coupled motion of electrons and ions within the oxide material, as one of the first recognized examples of a memristor (memory-resistor) device, the fourth fundamental passive circuit element originally predicted in 1971 by Chua. A lack of device repeatability has limited technological implementation of oxide switches, however. Here we explain the nature of the oxide electroforming as an electro-reduction and vacancy creation process caused by high electric fields and enhanced by electrical Joule heating with direct experimental evidence. Oxygen vacancies are created and drift towards the cathode, forming localized conducting channels in the oxide. Simultaneously, O 2− ions drift towards the anode where they evolve O 2 gas, causing physical deformation of the junction. The problematic gas eruption and physical deformation are mitigated by shrinking to the nanoscale and controlling the electroforming voltage polarity. Better yet, electroforming problems can be largely eliminated by engineering the device structure to remove 'bulk' oxide effects in favor of interface-controlled electronic switching.

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Section: Resultsmentioning

confidence: 99%

The mechanism of electroforming of metal oxide memristive switches

et al. 2009

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“…PEDOT is already heavily doped and ZnO can very easily be doped by exposure to UV irradiation. 21,23 After a few seconds of UV illumination, the shape of the I-V improves and V oc increases to 1.53 V. Moreover, due to the increased conductivity of the doped ZnO layer, the shortcircuit current ͑I sc ͒ also increases, resulting in an overall 50% improvement of the maximum power point ͑Fig. 3͒.…”

Section: Double and Triple Junction Polymer Solar Cells Processed Fromentioning

confidence: 99%

Double and triple junction polymer solar cells processed from solution

Gilot

Wienk

Janssen

2007

Applied Physics Letters

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344

290

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Multiple junction solar cells incorporating polymer:fullerene bulk heterojunctions as active layers and solution processed electron and hole transport layers are presented. The recombination layer, deposited between the active layers, is fabricated by spin coating ZnO nanoparticles from acetone, followed by spin coating neutral pH poly(3,4-ethylenedioxythiophene) from water and short UV illumination of the completed device. The key advantage of this procedure is that each step does not affect the integrity of previously deposited layers. The open-circuit voltage (Voc) for double and triple junction solar cells is close to the sum of the Voc’s of individual cells.

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“…This generally resulted in a 20 nm thick layer of ZnO. ZnO typically requires UV illumination to transform from an intrinsic semiconductor into an n-type material by desorption of O À 2 radicals from the surface [26,27]. After illumination with a Steuernagel SolarConstant 1200 metal halide lamp, a reduction of the work function from 4.2 to 3.7 eV was measured with a Kelvin probe calibrated to a gold reference.…”

Section: Methodsmentioning

confidence: 99%

A facile route to inverted polymer solar cells using a precursor based zinc oxide electron transport layer

Bruyn

Moet

Blom

2010

Organic Electronics

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A facile route to inverted polymer solar cells using a precursor based zinc oxide electron transport layer de Bruyn, Paul; Moet, D. J. D.; Blom, P. W. M. Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. Inverted polymer:fullerene solar cells with ZnO and MoO 3 transport layers are demonstrated. ZnO films are prepared through spin casting of a zinc acetylacetonate hydrate solution, followed by low temperature annealing under ambient conditions. The performance of solar cells with an inverted structure is shown to be equivalent to that of conventional cells with a bottom-anode-top-cathode configuration for three efficient polymer:fullerene systems.

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Electronic memory effects in diodes from a zinc oxide nanoparticle-polystyrene hybrid material

Cited by 143 publications

References 24 publications

The mechanism of electroforming of metal oxide memristive switches

The mechanism of electroforming of metal oxide memristive switches

Double and triple junction polymer solar cells processed from solution

A facile route to inverted polymer solar cells using a precursor based zinc oxide electron transport layer

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