Measurement techniques in MIM device characterization

Dunne, P. J.; Collins, R. A.

doi:10.1080/00207219008921179

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…Sandwich device structures were prepared by the sequential thermal evaporation of film layers under vacuum ( 5 Pa) onto precleaned polyborosilicate glass substrates, as described previously [ 151. Both A1 (lower electrode)-PbPc-Au (upper electrode) and Au-PbPc-A1 devices were studied. Edge thickening layers of SO, (0.1 pm) were deposited to overlap the PbPc to prevent spurious edge effects [19]. The PbPc layers varied in thickness between 2.00 and 2.35 pm, as determined using a traversing stylus method.…”

Section: Methodsmentioning

confidence: 99%

Schottky Barrier Formation and Electrical Transport in Oxygen-Doped Triclinic Lead Phthalocyanine Films

Ahmad

Collins

1991

Phys. Stat. Sol. (a)

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The electrical properties of oxygen‐doped thin films of triclinic lead phthalocyanine with mixed (Al, Au) electrodes are studied. AuPbPcAl and AlPbPcAu structures show different behaviour due to the varying oxygen distributions in the PbPc and the existence of an interfacial aluminium oxide layer in the latter case. At low voltages both types of device show Schottky diode behaviour. For AuPbPcAl structures the model of Cheung and Cheung is used to derive diode parameters. Barrier heights and widths are determined as a function of applied voltage and trap densities, hole concentrations, and the temperature parameter of the trapping are found to be consistent with reported values. The present results emphasise the role of oxygen doping and interfacial oxide layers in determination of the electrical behaviour of PbPc based devices.

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Section: Methodsmentioning

confidence: 99%

Schottky Barrier Formation and Electrical Transport in Oxygen-Doped Triclinic Lead Phthalocyanine Films

Ahmad

Collins

1991

Phys. Stat. Sol. (a)

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“…However, after development of VCNR in Al-Al 2 O 3 -Au diodes I F can be large enough that V A can be several tenths of a volt greater than V S . 21,22 All voltages reported for I -V curves after development of VCNR are V S ; before breakdown the two voltages are equal. Figure 1͑b͒ shows a schematic of the measurement system.…”

Section: Methodsmentioning

confidence: 99%

Voltage-dependent dielectric breakdown and voltage-controlled negative resistance in anodized Al–Al2O3–Au diodes

Hickmott

2000

Journal of Applied Physics

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Theories of dielectric breakdown in insulating films normally assume that dielectric breakdown depends on the electric field in the sample; that is, the thicker the film the higher the breakdown voltage. Contrary to theoretical expectations, voltage-dependent dielectric breakdown is observed in Al-Al 2 O 3 -Au diodes where Al 2 O 3 is made by anodizing in different electrolytes. The breakdown voltage is ϳ4.5 V, independent of Al 2 O 3 thickness and anodizing electrolyte. Voltage-controlled negative resistance ͑VCNR͒ develops in the current-voltage (I -V) characteristics of Al-Al 2 O 3 -Au diodes after voltage-dependent breakdown. Electron emission into vacuum accompanies the formation of VCNR in the I -V characteristics. Detailed studies of the development of VCNR show that the maximum current, the voltage for maximum current, and the voltage threshold for electron emission depend on the maximum voltage applied to the sample. A large current increase occurs for maximum applied voltage between 5 and 7 V. A fully developed VCNR characteristic has an ohmic contact suggesting that the development of an ohmic contact at a metal-insulator interface initiates breakdown.

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Ohmic and Space-Charge-Limited Conduction in Lead Phthalocyanine Thin Films

Ahmad

Collins

1991

Phys. Stat. Sol. (a)

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The electrical characteristics of thermally evaporated triclinic lead phthalocyanine thin films are studied. A number of parameters is evaluated on the basis of the theory of space-charge-limited conduction and the following values are obtained: permittivity E = 3.16 x lo-'' F m-'; hole mobility p x 6.05 x lo-'' m2 V-' s-';room temperature hole concentration p o z 1.60 x 10" m -3 ; concentration of traps per unit energy range at the valence band edge Po z 2.79 x J -' m^3; temperature parameter of trapping distribution IT; x 770 K; total trap concentration N, x 2.97 x The room temperature electrical conductivity o = 1.55 x lO-'OS m-'. C -U measurements confirm that the Au-PbPc interface does not form a Schottky barrier. At low temperatures the capacitance of Au-PbPc-Au devices is temperature insensitive, increasing rapidly above 300 K and saturating at about 400 K. Measurements of thermoelectric power confirm that semiconduction is p-type. Die elektrischen Eigenschaften von thermisch aufgedampften dunnen triklinen Blei-Phtalozyaninschichten werden untersucht. Eine Anzahl von Parametern wird auf der Grundlage der Theorie des raumladungsgegrenzten Stromes berechnet und folgende Werte erhalten: Dielektrizitatskonstante E = 3,16 x lo-" F m -I ; Locherbeweglichkeit p z 6,05 x lo-'' m 2 V-'s-'; Raumtemperaturlocherkonzentration p o z 1,60 x 10" m-3; Konzentration der Haftstellen pro Energieeinheit an der Valenzbandkante Po z 2,79 x J-' m -3 ; Temperaturparameter der Haftstellenverteilung ?; = 770 K; Gesarnthaftstellenkonzentration N, z 2,97 x loz3 ~t -~. Die elektrische Leitfahigkeit bei Zimmertemperatur betragt u = 1,55 x 10l o S m -I . C-U-Messungen bestatigen, dal3 die Au-PbPc-Grenzflache keine Schottky-Barnere bildet. Bei tiefen Temperaturen ist die Kapazitat von Au-PbPc-Au-Bauelementen temperaturunabhangig, steigt oberhalb 300 K schnell an und sattigt bei etwa 400 K. Messungen der Thermospannung bestatigen den p-Halbleitungstyp.

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Measurement techniques in MIM device characterization

Cited by 9 publications

References 16 publications

Schottky Barrier Formation and Electrical Transport in Oxygen-Doped Triclinic Lead Phthalocyanine Films

Schottky Barrier Formation and Electrical Transport in Oxygen-Doped Triclinic Lead Phthalocyanine Films

Voltage-dependent dielectric breakdown and voltage-controlled negative resistance in anodized Al–Al2O3–Au diodes

Ohmic and Space-Charge-Limited Conduction in Lead Phthalocyanine Thin Films

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