The Structural, Dielectric, Raman-Spectral and Low-Temperature Properties of Amorphous PbTiO<sub>3</sub>

Nakamura, Terutaro; Takashige, Masaaki; Terauchi, Hikaru; Miura, Y.; Lawless, W. N.

doi:10.1143/jjap.23.1265

Cited by 61 publications

(20 citation statements)

References 33 publications

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“…From the measurements at 0 and 4 min ion milling time, and assuming the amorphous layer thickness varies between 55 and 100 nm, the relative dielectric constant of this layer is found to range between 40 and 70. These values lie within the range of reported permittivities of PbO (ϭ8Ϫ15) 17 and amorphous PbTiO 3 (ϭ20), 18 and that of amorphous, sol-gel derived PZT films (ϭ160). 19 The fact that the dielectric constant of the PLZT film does not equal that of the control sample after 8 min of ion milling, when all or most of the surface layer should be removed, suggests that either ͑a͒ the ion milling process itself induces damage to the first few monolayers of the PLZT film, or ͑b͒ there is a change in the residual stress distribution in the film upon release from the original substrate.…”

Section: Resultssupporting

confidence: 83%

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Tsakalakos

Sands

Carleton

et al. 2003

Journal of Applied Physics

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Articles you may be interested inStructure and properties of W O 3 -doped Pb 0.97 La 0.03 ( Zr 0.52 Ti 0.48 ) O 3 ferroelectric thin films prepared by a sol-gel process Dielectric and ferroelectric properties of compositionally graded (Pb,La)TiO 3 thin films on Pt/Ti/SiO 2 /Si substrates Appl.Single-crystal Pb(Zr x Ti 1−x ) O 3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties Pulsed excimer laser irradiation of an absorbing thin film through a transparent substrate has been employed to separate epitaxial (Pb,La)(Zr,Ti)O 3 ͑PLZT͒ thin films from their MgO growth substrates. The morphology, microstructure, and dielectric properties of the laser-modified PLZT layer generated at the original PLZT/MgO interface by this laser liftoff ͑LLO͒ process was investigated. Atomic force microscopy measurements of the film surface after LLO indicated average surface roughness on the order of 90-100 nm, complementing previously reported scanning electron microscopy studies that revealed what appeared to be a rough glassy layer. The surface roughness is thought to form as the original growth substrate is ejected from the films transferred towards the end of the 38 ns pulse, pulling the molten near-interfacial portion of the PLZT film via surface tension, and followed by quenching of the liquid phase. Transmission electron microscopy of PLZT films transferred to Si wafers showed the surface layer consists of an irregular amorphous layer ranging in thickness from 50 to 100 nm, although some surface features protruded as far as 300 nm. Enhanced levels of lead were found to be present in the amorphous phase by Rutherford backscattering spectrometry, implying PbO evaporation and subsequent condensation during LLO. Electrical measurements determined the relative dielectric constant of the surface layer to be in the range of 40 -70. Subsequent ion milling of the layer demonstrated that the ferroelectric and dielectric properties of the original PLZT films were largely recovered, while the surface roughness was reduced to below 40 nm. The observed differences between the dielectric and ferroelectric properties of the film transferred after complete removal of the amorphous layer compared to those of the film on the original MgO substrate are attributed to the removal of substrate clamping.

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Section: Resultssupporting

confidence: 83%

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Tsakalakos

Sands

Carleton

et al. 2003

Journal of Applied Physics

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“…Based on the research of the dielectric constants of ferroelectric BaTiO 3 and PbTiO 3 ceramics, the dielectric constants have a maximum value at a critical grain size. 22,23 When the grain size is smaller than this critical size ferroelectric domains are absent. The dielectric constants then increase with increasing grain size because of increasing internal stress.…”

Section: Resultsmentioning

confidence: 99%

B-site donor and acceptor doped Aurivillius phase Bi3NbTiO9 ceramics

Yan

Zhang

et al. 2006

Journal of the European Ceramic Society

100

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“…The analysis of literary data shows that such assumptions are physically proved. Really, the ferroelectric behavior is noted both in organic 74 and in classical inorganic 75 glassy dielectrics with disordered structure. Specificity of formed structure in our copolymers can be determined by means of preparation of initial films.…”

Section: Resultsmentioning

confidence: 99%

Dielectric relaxation in vinylidene fluoride–hexafluoropropylene copolymers

Kochervinskiĭ

Malyshkina

Markin

et al. 2007

J of Applied Polymer Sci

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The molecular mobility in copolymers of vinylidene fluoride-hexafluoropropylene VDF/HFP of 93/7 and 86/14 ratios has been investigated by means of broadband dielectric relaxation spectroscopy (10 À1 -10 7 Hz), differential scanning calorimetry DSC (À100 to 1508C), and of wide angle X-ray diffraction WAXS. Four relaxation processes and one ferroelectric-paraelectric phase transition have been detected. The process of the local mobility b-(at temperatures below glass transition point) is not affected by chemical composition of the copolymer and the formed structure. Parameters of segmental mobility in the region of glass transition (a a -relaxation) depend on the ratio of comonomer with lower kinetic flexibility. a c -relaxation is clearly observed only in VDF/HFP 93/7 copolymer, which is characterized by a higher crystallinity and a higher perfection of crystals of a-(a p -) phase. Diffuse order-disorder relaxor type ferroelectric transition connected with the destruction of the domains in low-perfect ferroelectric phase in the amorphous regions has been detected for both copolymers. An intensive relaxation process (a-process) was observed for both copolymers in high-temperature region. DSC data shows that it falls on the broad temperature region of aphase crystals melting. It is considered to be connected with the space charge relaxation.

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The Structural, Dielectric, Raman-Spectral and Low-Temperature Properties of Amorphous PbTiO₃

Cited by 61 publications

References 33 publications

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

B-site donor and acceptor doped Aurivillius phase Bi3NbTiO9 ceramics

Dielectric relaxation in vinylidene fluoride–hexafluoropropylene copolymers

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The Structural, Dielectric, Raman-Spectral and Low-Temperature Properties of Amorphous PbTiO3

Cited by 61 publications

References 33 publications

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

B-site donor and acceptor doped Aurivillius phase Bi3NbTiO9 ceramics

Dielectric relaxation in vinylidene fluoride–hexafluoropropylene copolymers

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Resources

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The Structural, Dielectric, Raman-Spectral and Low-Temperature Properties of Amorphous PbTiO₃