The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning

Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization

“…1b). Hence we conclude that thermal desorption accompanied with hydrogen treatment is the most efficient method to prepare a clean 2D crystalline surface, which is in agreement with literature according to which hydrogen treatment is efficient to remove carbon contamination from the surface [11,12].…”

Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen

“…It is clear that slight chemical shifts in core level binding energy, as deduced from the XPS spectrum, do not necessarily imply only slight shifts in kinetic energy of the Auger electrons because of the difference in the final states of these processes. Indeed, a similar shift in AES kinetic energy due to hydrocarbons has also been found as a result of atomic hydrogen reaction with carbon contaminated silicon surfaces [35]. Thus, with respect to the above-presented studies as well as with respect to the fact that atomic hydrogen adsorption markedly modifies the local electronic states of carbon [6] we are able to explain quite well the existence of the special feature at 252 eV in the AES spectra and the additional XPS peak designated to sp2 carbon bonds.…”

Laser Activated Radical Generation in Rapid Thermal Processing

“…Lowest temperatures for a significant SiO2 desorption were 800°C [3,6]. For C removal a temperature of about 500°C is needed [2]. Although the decomposition of the carbon containing residuals takes place already at lower temperatures, as can be seen from the energy shift of the carbon peak, the desorption of the reaction products starts at 500°C.…”

“…One cleaning method is the well known hydrogen bake [6,7]. Therefore the removal of carbon and SiO2 using hydrogen radicals or molecules was investigated by experiments [2,3]. Fig.…”