Laser Activated Radical Generation in Rapid Thermal Processing

Abstract

In the present paper it will be shown that RTP combined with laser irradiation parallel to the wafer surface yields an optimum control of chemical reactions. The technique will be discussed and results regarding the surface preparation of silicon wafers as well as the deposition of atomically controlled layers for nanoelectronics will be presented. Examples are the removal of carbon containing residuals with oxygen, and the removal of the native silicon oxide with germane at temperatures of 600°C. Besides surface preparation it will also be shown that laser temperatures are possible.

Cleaning of Silicon Surfaces for Nanotechnology

“…In recent experiments [124] [92] we used an ArF eximer laser (ExiStar M-100, TUI laser) with a wavelength of 193 nm, which was guided parallel to the substrate into an UHV chamber in order to exclude any thermal heating or UV induced dissociation effects. The UHV chamber was equipped with a vacuum leakage valve for oxygen inlet.…”