Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen

Tomkiewicz, Pawel; Winkler, Adolf; Krzywiecki, Maciej; Chassé, Thomas; Szuber, J.

doi:10.1016/j.apsusc.2008.03.074

Cited by 12 publications

(10 citation statements)

References 41 publications

(41 reference statements)

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“…56,57 In contrast to ions, AH and AO can etch carbon without any physical sputtering of adsorbed metal atoms. Atomic radicals can also be generated cleanly in a vacuum environment by passing the parent diatomic gas through a heated capillary.…”

Section: A͒mentioning

confidence: 99%

Atomic radical abatement of organic impurities from electron beam deposited metallic structures

Wnuk

Gorham

Rosenberg

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Focused electron beam induced processing ͑FEBIP͒ of volatile organometallic precursors has become an effective and versatile method of fabricating metal-containing nanostructures. However, the electron stimulated decomposition process responsible for the growth of these nanostructures traps much of the organic content from the precursor's ligand architecture, resulting in deposits composed of metal atoms embedded in an organic matrix. To improve the metallic properties of FEBIP structures, the metal content must be improved. Toward this goal, the authors have studied the effect of atomic hydrogen ͑AH͒ and atomic oxygen ͑AO͒ on gold-containing deposits formed from the electron stimulated decomposition of the FEBIP precursor, dimethyl-͑acetylacetonate͒ gold͑III͒, Au III ͑acac͒Me 2 . The effect of AH and AO on nanometer thick gold-containing deposits was probed at room temperature using a combination of x-ray photoelectron spectroscopy ͑XPS͒, scanning Auger electron spectroscopy, and atomic force microscopy ͑AFM͒. XPS revealed that deposits formed by electron irradiation of Au III ͑acac͒Me 2 are only Ϸ10% gold, with Ϸ80% carbon and Ϸ10% oxygen. By exposing deposits to AH, all of the oxygen atoms and the majority of the carbon atoms were removed, ultimately producing a deposit composed of Ϸ75% gold and Ϸ25% carbon. In contrast, all of the carbon could be etched by exposing deposits to AO, although some gold atoms were also oxidized. However, oxygen was rapidly removed from these gold oxide species by subsequent exposure to AH, leaving behind purely metallic gold. AFM analysis revealed that during purification, removal of the organic contaminants was accompanied by a decrease in particle size, consistent with the idea that the radical treatment of the electron beam deposits produced close packed, gold particles. The results suggest that pure metallic structures can be formed by exposing metal-containing FEBIP deposits to a sequence of AO followed by AH.

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Section: A͒mentioning

confidence: 99%

Atomic radical abatement of organic impurities from electron beam deposited metallic structures

Wnuk

Gorham

Rosenberg

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…However, when a sample was heated to 450 °C for 30 minutes under the same UHV conditions prior to AH exposure, while the same results were seen in terms of oxide removal, there was virtually no change in the amount of carbon that was present after the anneal, suggesting the carbon became strongly bonded to the surface as a result of the high temperature. Tomkiewicz et al recently reported that the carbon removal by AH progresses principally through the formation of methane [9], however, if the carbon is bonded to the substrate, this could inhibit formation of CH 4 , and carbon removal from the surface.…”

Section: Figurementioning

confidence: 98%

“…The use of atomic hydrogen (AH) as a method for oxide removal and surface cleaning of III -V semiconductors has been proposed due to the relatively low temperature needed to instigate the oxide removal [7,8], which is important due to the low decomposition temperature of III-V semiconductor materials in general. This study investigates the effectiveness of AH exposure on In 0.53 Ga 0.47 As substrates at removing the native oxides, as well as surface carbon contamination present due to atmospheric exposure [9,10].…”

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confidence: 99%

Atomic hydrogen cleaning of In_0.53Ga_0.47As studied using synchrotron radiation photoelectron spectroscopy

Brennan

Kumar

Hughes

2013

Physica Rapid Research Ltrs

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1 Introduction High mobility semiconductors are envisaged to replace silicon as the channel material in future generations of metal-oxide-semiconductor field effect transistors (MOSFETs) based on the industrial roadmap for semiconductor devices [1,2], coupled with the incorporation of high-κ dielectric materials [3]. However, a major roadblock to this is the presence of significant levels of interface defects between the III-V and high-κ materials, which are known to cause frequency dispersion and Fermi level pinning in semiconductor devices. As a result, the identification, prevention or removal of these interface states is of critical importance to the future development of the technology. In 0.53 Ga 0.47 As is one of the proposed high mobility semiconductor materials under investigation [4], having an electron mobility significantly greater than that of silicon, as well as being lattice matched to InP, which has potential implications for the facile formation of buried channel quantum well structures [5] and through substrate engineering, the potential to be grown on a silicon platform [6]. The use of atomic hydrogen (AH) as a method for oxide removal and surface cleaning of III -V semiconductors has been proposed due to the relatively low temperature needed to instigate the oxide removal [7,8], which is important due to the low decomposition temperature of III-V

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“…Thus, it is worthwhile to note that the densities obtained by XRR for our films are all similar, when we go on to consider the effects of AlN inclusion into the SiN film. Another interesting point is low carbon contents of all films (1-2 at%), presumably due to H 2 post-plasma-treatment and consequent removal of carbon by hydrogenation of carbon to CH x species 36. Thickness, composition, and density of PEALD films of pure SiN, pure AlN, and mixed SiNAlN films.…”

mentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

Kim¹,

Provine²,

Walch³

et al. 2016

ACS Appl. Mater. Interfaces

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The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

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Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen

Cited by 12 publications

References 41 publications

Atomic radical abatement of organic impurities from electron beam deposited metallic structures

Atomic radical abatement of organic impurities from electron beam deposited metallic structures

Atomic hydrogen cleaning of In_0.53Ga_0.47As studied using synchrotron radiation photoelectron spectroscopy

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

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Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen

Cited by 12 publications

References 41 publications

Atomic radical abatement of organic impurities from electron beam deposited metallic structures

Atomic radical abatement of organic impurities from electron beam deposited metallic structures

Atomic hydrogen cleaning of In0.53Ga0.47As studied using synchrotron radiation photoelectron spectroscopy

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

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Atomic hydrogen cleaning of In_0.53Ga_0.47As studied using synchrotron radiation photoelectron spectroscopy