Atomic hydrogen cleaning of In_0.53Ga_0.47As studied using synchrotron radiation photoelectron spectroscopy

Abstract

1 Introduction High mobility semiconductors are envisaged to replace silicon as the channel material in future generations of metal-oxide-semiconductor field effect transistors (MOSFETs) based on the industrial roadmap for semiconductor devices [1,2], coupled with the incorporation of high-κ dielectric materials [3]. However, a major roadblock to this is the presence of significant levels of interface defects between the III-V and high-κ materials, which are known to cause frequency dispersion and Fermi level pinning in semiconductor devices. As a result, the identification, prevention or removal of these interface states is of critical importance to the future development of the technology. In 0.53 Ga 0.47 As is one of the proposed high mobility semiconductor materials under investigation [4], having an electron mobility significantly greater than that of silicon, as well as being lattice matched to InP, which has potential implications for the facile formation of buried channel quantum well structures [5] and through substrate engineering, the potential to be grown on a silicon platform [6]. The use of atomic hydrogen (AH) as a method for oxide removal and surface cleaning of III -V semiconductors has been proposed due to the relatively low temperature needed to instigate the oxide removal [7,8], which is important due to the low decomposition temperature of III-V

Post-CMP Cleaning of InGaAs Surface for the Removal of Nanoparticle Contaminants for Sub-10nm Device Applications

“…A few studies have explored the removal of InGaAs native oxide by using direct argon and helium plasma coupled with HCl wet chemical treatment 14 and atomic hydrogen cleaning. 15 Many researchers have predominantly focused on wet etching of InGaAs using acids, bases, and peroxide based mixture solutions. [16][17][18][19][20] Wet etching of semiconductor materials generally requires oxidizing agents in suitable chemical solutions to remove the oxidized surface products.…”