Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization

AlZoubi, Tariq; Usman, Muhammad; Benyoucef, M.; Reithmaier, Johann Peter

doi:10.1016/j.jcrysgro.2010.11.170

Cited by 16 publications

(9 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It should be noted that the shape and size of InAs QDs (data not shown) are significantly changed by increasing the indium growth rate from 108 nm h −1 (0.1 ML s −1 ) to 324 nm h −1 (0.3 ML s −1 ). The density and the size of InAs QDs were also found to increase with increasing InAs coverage .…”

Section: Resultsmentioning

confidence: 91%

“…Different growth parameters were examined. It was found that by increasing the V/III ratio from 15 to 35 (beam equivalent pressure (BEP) ratio), the density of InAs QDs is strongly modified and increased from approximately 10 8 cm −2 to approximately 10 11 cm −2 . This is a clear indication that the arsenic flux is an important parameter to control the QD density.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Nanostructured hybrid material based on highly mismatched III–V nanocrystals fully embedded in silicon

Benyoucef

AlZoubi

Reithmaier

et al. 2013

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect‐free silicon matrix after a multi‐step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high‐resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect‐free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III–V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect‐free silicon.

show abstract

Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Nanostructured hybrid material based on highly mismatched III–V nanocrystals fully embedded in silicon

Benyoucef

AlZoubi

Reithmaier

et al. 2013

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…For more details see Ref. 21. Surface cleaning is a first step to be examined to establish high quality silicon surfaces for III/V overgrowth by removing impurities and contaminations.…”

Section: Direct Quantum Dot Growth On Silicon Surfacesmentioning

confidence: 99%

“…For III–V/Si hybrid integration, direct epitaxial growth of III–V compounds on silicon substrates would be the most desirable approach, because only silicon processing is required as is already used in passive silicon photonics. Nevertheless, heteroepitaxial growth typically introduces a substantial crystalline defect density 18–21. As a result, the presence of high‐density threading dislocations due to the lattice mismatch and the formation of antiphase boundaries due to the polar non‐polar nature of the III–V/IV semiconductor system propagating through the active material will become a non‐radiative recombination centre, which will destroy the light emission 22–24.…”

Section: Introductionmentioning

confidence: 99%

Pre‐patterned silicon substrates for the growth of III–V nanostructures

Benyoucef

Usman

AlZoubi

et al. 2012

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

This paper reviews the recent progresses obtained by direct growth of III-V semiconductor quantum dots (QDs) on prepatterned and flat silicon substrates. This combination allows us to study in detail the growth mechanisms of III-V materials on silicon substrates. For the flat surfaces, we concentrate on basic growth studies addressing mainly morphological properties of QD-like structures with a main emphasis on surface preparation and growth parameters. For the pre-patterned substrates, we report the optimization of electron beam lithography and dry etching processes to fabricate sub-100 nm holes in prepatterned Si (100) substrates with controlled size, shape, and periodicity. The pre-patterned silicon substrates underwent thorough ex situ chemical and in situ cleaning processes before the molecular beam epitaxy (MBE) growth. Finally, the MBE growth sequence of QDs on patterned silicon surface has shown highly selective formation of localized dome like nanostructures in patterned holes with 1 mm period.A 3D AFM image of a single nanohole in silicon substrate with diameter and depth of about 70 nm.

show abstract

“…Although numerous techniques have been developed in order to fabricate well-ordered arrays of InAs, [11][12][13][14][15][16] growing highly stoichiometric ([In]/[As] ¼ 1:1) nanodots (NDs) is still challenging. Studies show that the stability and optical properties of NDs strongly depend on surface structure and composition of the nanostructure.…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation of the plasma-aided fabrication of stoichiometric InAs nanodots at early stage of the growth

Alizadeh

Mehdipour

Goh

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Using numerical modeling of the plasma sheath and key surface processes, the plasma-aided fabrication of InAs nanodots is investigated at early stage of the growth. Roles of different plasma process parameters, such as electron temperature, electron number density, and ion-to-electron density ratio, in achieving the stoichiometric growth of the nanodots are explored and conditions to achieve a highly stoichiometric InAs composition are discussed. It is shown that the nanodots get larger with increasing the electron temperature and electron number density, whereas they shrink in size with increasing the ion-to-electron density ratio. Moreover, it is shown that with increase in the electron temperature and electron number density stoichiometric saturation state can be reached shortly, which this enables the fabrication of highly stoichiometric array of nanodots within shorter processing time. The results obtained can open a path toward nucleation and growth of an array of nanodots with desired structural composition and size distribution.

show abstract

Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization

Cited by 16 publications

References 14 publications

Nanostructured hybrid material based on highly mismatched III–V nanocrystals fully embedded in silicon

Nanostructured hybrid material based on highly mismatched III–V nanocrystals fully embedded in silicon

Pre‐patterned silicon substrates for the growth of III–V nanostructures

Numerical investigation of the plasma-aided fabrication of stoichiometric InAs nanodots at early stage of the growth

Contact Info

Product

Resources

About