Pre‐patterned silicon substrates for the growth of III–V nanostructures

Semicond. Sci. Technol.

2013

This paper reports the recent progress obtained by direct growth of III-V semiconductor quantum dots (QDs) on flat and prepatterned silicon substrates. For the flat surfaces, we discuss the basic growth studies addressing mainly morphological and structural properties of QD-like structures using transmission electron microscopy. For the growth on prepatterned substrates, we report on the optimization of the electron beam lithography process to fabricate sub-100 nm holes in silicon and the MBE growth on prepatterned Si (1 0 0) surfaces. Finally, we report the observation of bright photoluminescence emissions from single InAs/GaAs QDs grown directly on flat silicon substrates.

Section: Direct Molecular Beam Epitaxy Growth Of Inas On Silicon Subs...mentioning

confidence: 95%

Direct growth of III–V quantum dots on silicon substrates: structural and optical properties

Semicond. Sci. Technol.

2013

“…More details about the nanopatterning process can be found in Refs. . The resist was removed using a sequence of cleaning steps involving acetone and isopropyl alcohol.…”

Section: Methodsmentioning

confidence: 99%

Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates

Usman

2014

Phys. Status Solidi A

GaAs islands have been grown by molecular beam epitaxy on Si (100) substrates patterned with nanoscale holes using only few monolayer deposition thicknesses. The site‐controlled growth has been achieved without masking the Si surface with SiO2 between the patterned holes. The nucleation density of GaAs islands between the patterned holes shows a strong dependence on the growth temperature, V/III beam flux ratio and nominal deposition thickness. Through the selection of optimal growth parameters GaAs islands have been grown highly selectively in the patterned holes over a wide range of hole diameters for fixed spacing as well as over a wide range of spacings for fixed diameter of the holes. The influence of pattern features (hole diameter, spacing) on the morphological properties of the site‐controlled GaAs islands has been investigated in detail. A (5 × 5) μm2 AFM image of GaAs nanoislands selectively grown in patterned holes with 70 nm diameter and a spacing of 0.5 μm on Si substrate.

“…This approach is based on the growth of III-V quantum dots (QDs) directly grown on either planar silicon 14 or on patterned surfaces. 15,16,17 Based on a GaAs/InAs core-shell geometry high-quality optical emission could be obtained. 18 By overgrowing InAs QDs with silicon a defect-free single-crystal planar silicon layer can be formed with embedded InAs nano clusters.…”

Section: Introductionmentioning

confidence: 99%

(Invited) III-V / Si Integration for Photonics

2016

ECS Trans.

A brief overview is given on different approaches how to integrate III-V materials on a silicon platform for photonics with a main focus on epitaxial techniques. Beside diverse bonding and different direct epitaxial growth techniques of III-V on Si, a new potential approach based on a III-V/Si nanocomposite will be discussed, which may allow to overcome most of the basic problems in heterogeneous integration techniques, e.g., cross-contamination between III-V and Si and cost issues related to parallel efforts in III-V and Si processing. Initial results towards this new approach will be presented, such as on optically active GaAs/InAs core-shell quantum dots directly grown on Si and on monolithic integration of InAs nano clusters fully embedded into a defect free and planar Si matrix. Due to the minimization of the consumption of the involved III-V materials and the complete Si coverage, standard Si processes on a full wafer scale are feasible.