Direct growth of III–V quantum dots on silicon substrates: structural and optical properties

Benyoucef, M.; Reithmaier, Johann Peter

doi:10.1088/0268-1242/28/9/094004

Cited by 16 publications

(11 citation statements)

References 66 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[4][5][6][7] As the full integration of LOQC on a single chip requires the on-chip generation of single photons, the implementation of ondemand single quantum emitters on silicon is an ongoing research topic. [8][9][10] There have also been several attempts to use probabilistic schemes like spontaneous four-wave mixing. 11,12 Another approach is the transition to the III-V semiconductor platform, where efficient guiding of single photons in WGs has already been shown.…”

mentioning

confidence: 99%

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

Rengstl

Schwartz

Herzog

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

We present an on-chip beamsplitter operating on a single-photon level by means of a quasi-resonantly driven InGaAs/GaAs quantum dot. The single photons are guided by rib waveguides and split into two arms by an evanescent field coupler. Although the waveguides themselves support the fundamental TE and TM modes, the measured degree of polarization (∼90%) reveals the main excitation and propagation of the TE mode. We observe the preserved single-photon nature of a quasi-resonantly excited quantum dot by performing a cross-correlation measurement on the two output arms of the beamsplitter. Additionally, the same quantum dot is investigated under resonant excitation, where the same splitting ratio is observed. An autocorrelation measurement with an off-chip beamsplitter on a single output arm reveal the single-photon nature after evanescent coupling inside the on-chip splitter. Due to their robustness, adjustable splitting ratio, and their easy implementation, rib waveguide beamsplitters with embedded quantum dots provide a promising step towards fully integrated quantum circuits.

show abstract

mentioning

confidence: 99%

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

Rengstl

Schwartz

Herzog

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…By depositing several monolayers of semiconductors with a strong lattice mismatch, epitaxial growth can be initiated in a layer-by-layer fashion and to coherently grow 3D islands (Figure 10(a)–(f)) [50]. …”

Section: Quantum Dots: Properties and Synthesismentioning

confidence: 99%

Understanding chemically processed solar cells based on quantum dots

Malgras

Nattestad

Kim

et al. 2017

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

Photovoltaic energy conversion is one of the best alternatives to fossil fuel combustion. Petroleum resources are now close to depletion and their combustion is known to be responsible for the release of a considerable amount of greenhouse gases and carcinogenic airborne particles. Novel third-generation solar cells include a vast range of device designs and materials aiming to overcome the factors limiting the current technologies. Among them, quantum dot-based devices showed promising potential both as sensitizers and as colloidal nanoparticle films. A good example is the p-type PbS colloidal quantum dots (CQDs) forming a heterojunction with a n-type wide-band-gap semiconductor such as TiO2 or ZnO. The confinement in these nanostructures is also expected to result in marginal mechanisms, such as the collection of hot carriers and generation of multiple excitons, which would increase the theoretical conversion efficiency limit. Ultimately, this technology could also lead to the assembly of a tandem-type cell with CQD films absorbing in different regions of the solar spectrum.

show abstract

“…Due to this large potential, there is a great interest for the integration of III-V compound semiconductors into Si technology. This integration can be performed by several techniques, where molecular beam epitaxy [12][13][14], metal-organic vapor phase epitaxy [15][16][17] and wafer bonding [18,19] are the most prominent ones. Another approach is ion beam synthesis of III-V crystallites within the Si host material [20,21] using sequential ion beam implantation and thermal annealing [22,23].…”

Section: Introductionmentioning

confidence: 99%

Formation of In_xGa_1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing

et al. 2017

View full text Add to dashboard Cite

The integration of high-mobility III-V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a nonconventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employed to fabricate In x Ga 1−x As nanocrystals and to study their crystallization process in thin Si layers. The implantation fluence ratio of Ga and In ions has been varied to tailor the final nanocrystal composition. Raman spectroscopy and x-ray diffraction analyses verify the formation of ternary III-V nanocrystals within the Si layer. Transmission electron microscopy reveals singlecrystalline precipitates with a low number of defects. A liquid epitaxy mechanism is used to describe the formation process of III-V nanocrystals after melting of the implanted thin Si layer by flash lamp annealing. The fabricated In x Ga 1−x As nanocrystals are mainly Ga-rich with respect to the implanted Ga/In ratio.

show abstract

Direct growth of III–V quantum dots on silicon substrates: structural and optical properties

Cited by 16 publications

References 66 publications

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

Understanding chemically processed solar cells based on quantum dots

Formation of In_xGa_1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing

Contact Info

Product

Resources

About

Direct growth of III–V quantum dots on silicon substrates: structural and optical properties

Cited by 16 publications

References 66 publications

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

Understanding chemically processed solar cells based on quantum dots

Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing

Contact Info

Product

Resources

About

Formation of In_xGa_1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing