Formation of In_xGa_1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing

Abstract

The integration of high-mobility III-V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a nonconventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employed to fabricate In x Ga 1−x As nanocrystals and to study their crystallization process in thin Si layers. The implantation fluence ratio of Ga and In ions has been varied to tailor the final nanocrystal composition. Raman spectroscopy and x-ray diffraction analyses verify the formation of ternary III-V nanocrystals within the Si layer. Transmission electron microscopy reveals singlecrystalline precipitates with a low number of defects. A liquid epitaxy mechanism is used to describe the formation process of III-V nanocrystals after melting of the implanted thin Si layer by flash lamp annealing. The fabricated In x Ga 1−x As nanocrystals are mainly Ga-rich with respect to the implanted Ga/In ratio.

Radiative recombination in zinc blende ZnSe nanocrystals ion-beam synthesized in silica

“…Indeed, ion implantation is a widely applied technique not only to modify the electronic and optical properties of semiconducting and insulating materials. This technique is well suitable for the formation of metal and semiconductor nanoclusters in different matrix [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40].…”