The quantitative effects of interface states on the performance of charge-coupled devices

Signal-Processing Applications of Charge-Coupled Devices

“…(11) differs from that of anN-stage ideal delay, given by z-N, due to the term 'I)N(1 -E Z-1 rN which is responsible for attenuation and distortion. This distortion causes a train of spurious pulses in the unit sample response of the device.…”

“…(c) Fringing field drift,}t = q p (x,t) p. 11 Et (x,t) (4) where q is the electronic charge, p is the number of charge carriers per unit volume, E is the electric field, j is the current density, D is the diffusion co-efficient and p. is the carrier mobility.…”

“…Since the surface potential under G 2 , simulating the MOST drain is a function of charge, the MOST may be characterised by a drain with time-varying drain voltage. Amount of charge below G 2 , in this scheme, is given by, 11 Q,,g = I I dt (7) 11 The operating conditions are such that I is saturated making it time independent.…”

“…This has led to the development of all solid-state TV cameras and facsimile systems (Tompsett et al 1973, Tompsett et al 1971). Due to their low inherent noise characteristics, they are sensitive even at extremely low-light levels.…”

Investigation of Charge Coupled Devices for Signal Processing.

“…The major source of transfer inefficiency then comes from interface states at the edges of the transfer electrodes. This occurs because the area of interface over which a charge packet is stored is larger than that occupied by background charge [23]. This is sometimes referred to as the non-linear i-ss since the loss is a function of signal size [24].…”