Sínícíttree hmie been jabrvMed consisting of closely spaced MOS ca pacitors on an n-type silicon substrate. By forming a depletion region under one of the electrodes, minority carriers (holes) may be stored in the resulting potential uxU. This charge may then be transferred to an adjacent electrode by proper manipulation of electrode potentiah. The assumption thtü this transfer wiU take place in reasotuible times with a smaU fractional loss of charge is the basis of the charge coupled devices described in the preceding paper.^ To test this assumption, devices were fabricated and measurements made. Charge transfer efficiencies greater than 98 percent for transfer times less than 100 nsec were ^served.The basic principles of the charge coupled device, as abeady de scribed,' are very simple indeed, but it is not clear whether the properties of an MIS system are adequate to give viable devices. The purpose
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