The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine

Abstract

Single crystalline InAs~-xPx layers have been prepared by a vapor-phase growth technique previously used to prepare very high-quality GaAsl-xPx. These InAsl-xPz alloys exhibit electron mobilities equivalent to the highest yet reported for this system. Extensive electron mobility data is reported for the alloys at 77~At this temperature, a mobility value of 120,000 cm"/v-sec was measured for InAs, which is slightly higher than previously reported. Vegard's law is obeyed over the entire composition range. Both nand p-type doping has been achieved during vapor growth to provide a broad range of electrical resistivities and

Equilibrium calculations for VPE-InGaAsP

“…The values of the heterogeneous-reaction constants are subject to considerable fluctuations. Since a critical analysis of the existing thermochemical data is beyond the scope of this work, we have used the values which allow for a fairly good agreement with the well-established experimental data relative to InGaAs [17], InGaP [18], GaAsP [19] and InAsP [20], used simultaneously. The comparison between these data and those obtained by solving the above system is shown in figures 1 and 2.…”

Current status of negative electron affinity devices

“…One vapor-phase growth method [7], [9], [lo] in particular has provided a broad range of 111-V compounds and alloys that have exhibited outstanding properties for NEA applications. With this growth method, the desired material is prepared as an epitaxial film in an open-tube flow system.…”

The Orientation Dependence of Epitaxial InAs[sub x]P[sub (1−x)] on GaAs

“…Purified hydrogen and high-purity AsH~ and PH3 each in hydrogen gas are mixed in a mixing chamber prior to introduction to the reactor. Anhydrous HC1 gas (purchased from the Matheson Company) which has also been mixed with purified hydrogen, is passed through the heated indium reservoir and transports the volatile InC1 to the deposition zone (1,2). In these experiments 4% AsH3 and 4% PH3 each in hydrogen obtained from the Matheson Company, were sources.…”

“…The flow rates of AsH3 and PH~ relative to the alloy composition were determined in earlier studies (1,2). A two-zone resistance furnace provided temperature control of the indium reservoir and the GaAs substrates.…”