Current status of negative electron affinity devices

Williams, B. F.; Tietjen, J. J.

doi:10.1109/proc.1971.8459

Cited by 64 publications

(8 citation statements)

References 34 publications

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“…An early observation by Goldstein suggests that amorphous overlayers of CsO are not sufficient to induce (effective) NEA on Si – crystalline layers are required. The surface dipole of the silicon itself is not altered but the overlayer possesses a strong dipole moment of its own . Intuitively, one expects that in the case of diamond it will be much harder to produce a crystalline overlayer of Cs due to the very large difference between the atomic size of Cs and C/O.…”

Section: Brief Review Of Alternative Approaches To Neamentioning

confidence: 99%

Photoelectron emission from lithiated diamond

O’Donnell

Martin

Edmonds

et al. 2014

Physica Status Solidi (a)

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This paper reviews electron emission from negative electron affinity (NEA) diamond and gives account of the recent developments in alternatives to hydrogen‐termination for producing NEA diamond surfaces, particularly using lithium on oxygen‐terminated diamond. We discuss the background and motivation for using alkali metals and present both experimental and computational results that cover structure, electronic properties, photoemission, and total photoyield. Secondary yield enhancement of over 200 × is demonstrated over a reference surface with positive electron affinity.

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Section: Brief Review Of Alternative Approaches To Neamentioning

confidence: 99%

Photoelectron emission from lithiated diamond

O’Donnell

Martin

Edmonds

et al. 2014

Physica Status Solidi (a)

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“…The reactant gases were mixed immediately before flowing into the reaction chamber. 3 Iron, chromium, and sulfur-doped InP substrates were obtained4 in the form of rough sawn wafers, which were <100> oriented. These wafers were polished by mechanical lapping with successively finer grits, the final polishing being done with 0.06 #m alumina.…”

Section: Substrate Etchingmentioning

confidence: 99%

Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process

Whiteley

Ghandhi

1982

J. Electrochem. Soc.

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Gallium indium arsenide is a promising semiconductor for a wide range of device applications. The compound Ga0.47Ino.53As has the same lattice constant as InP, prompting considerable effort to grow it epitaxially on InP in order to minimize defects at the epi-substrate interface. This paper outlines the conditions that we believe are necessary for growing epitaxial layers of Ga0.47Ino.a~As on InP substrates. Experiments have been conducted to grow these layers under atmospheric pressure, unlike previous work which was done at reduced pressure. Emphasis has been placed on the use of an in situ etching of the InP substrate, with HC1, which we find to be critical for layer growth. Etch rates were controllable between 2-20 ~m/min and no dopant pile-up was observed using Auger spectroscopy. Gal-zIn~As layers were grown at 700~ with 0.3 ~--x --~ 0.6 and exhibited a linear relation to the In/Ga ratio in the reactant stream.

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“…One of the most fundamental and technologically relevant phenomena in light-matter interaction is the demonstration of the photoelectric effect, where photons have been used to emit electrons in free space. Efficient electron emission from various types of materials has enabled technologies for many cutting-edge applications such as free-electron lasers, image intensifiers for night imaging, sources for next-generation electron-beam lithography, electron microscopy, and photomultipliers; it has also led to the elucidation of novel materials physics probed through the investigation of the spin, momentum, and energy of the emitted electron [14][15][16][17] . State-of-the-art electron sources (or photocathodes) are classified into three families depending on the active material type: metals (Cu, Mg, Pb), alkali antimonide and tellurides (Cs 2 Te, K 2 CsSb, Cs 3 Sb), and III-V semiconductors (GaAs, GaN, tertiary alloys of III-V materials) 18 .…”

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confidence: 99%

Highly efficient photoelectric effect in halide perovskites for regenerative electron sources

et al. 2021

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Electron sources are a critical component in a wide range of applications such as electron-beam accelerator facilities, photomultipliers, and image intensifiers for night vision. We report efficient, regenerative and low-cost electron sources based on solution-processed halide perovskites thin films when they are excited with light with energy equal to or above their bandgap. We measure a quantum efficiency up to 2.2% and a lifetime of more than 25 h. Importantly, even after degradation, the electron emission can be completely regenerated to its maximum efficiency by deposition of a monolayer of Cs. The electron emission from halide perovskites can be tuned over the visible and ultraviolet spectrum, and operates at vacuum levels with pressures at least two-orders higher than in state-of-the-art semiconductor electron sources.

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Current status of negative electron affinity devices

Cited by 64 publications

References 34 publications

Photoelectron emission from lithiated diamond

Photoelectron emission from lithiated diamond

Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process

Highly efficient photoelectric effect in halide perovskites for regenerative electron sources

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