No abstract

Epitaxial layers of GaAs have been grown in an atmospheric organometallic CVD system, for a wide variety of gas phase reactant partial pressures and over a broad range of temperature (450~176The growth rates for (100), (100) + 3 ~ --* < 110>, (110), (111)Ga, and (111)As substrates are reported as functions of temperature and gas composition. Three distinct temperature dependent regions of growth are identified, corresponding to a mid-temperature mass transport limited range, a lowtemperature kinetic controlled regime, and a high-temperature desorption limited region. The growth rate is studied as a function of the growth parameters and substrate orientation, and is related to the decomposition of the two reactants trimethylgallium and arsine. A model for the epitaxial growth of GaAs by the organometallic process is proposed, based on these findings. Experimental ProcedureEpitaxial layers of GaAs were grown by the pyrolysis of arsine and TMG, using hydrogen as the carrier gas. Anhydrous hydrogen chloride was available for * Electrochemical Society Active Member.

Zinc oxide films, with a high degree of c-axis orientation, have been grown on glass substrates by a chemical vapor deposition process involving the oxidation of diethylzinc. Film growth was carried out over the 200–500 °C temperature range; however, the maximum crystal orientation was found to occur with substrate temperatures between 325 and 400 °C. The effect of different substrate materials on crystallographic orientation is also described in this letter.

A new technique is described for the deposition of SnO2 films based upon the pyrolysis of tetramethyltin (TMT) in oxygen at relatively low temperatures (~450~ As a tin source, TMT has the advantages of being stable in air and moisture and of being a liquid with a relatively high vapor pressure at room temperature. Thus, a simple bubbler system is used to transport its vapors to the reaction chamber. The deposition technique is characterized by (i) high and controllable growth rates (more than 300 A/min), (it) high conductivity layers [more than 30(ohm-cm) -1 undoped], and (iii) highly transparent layers in the visible range (more than 95% transmission for 1500A layers). ,In addition, the films can be doped to achieve conductivities as high as 200 (ohm-cm) -1 without loss in transmission. Finally, fast, low temperature anneals with forming gas in an open-tube system can be effectively used to result in an additional twofold increase in conductivity.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.120.3 Downloaded on 2015-06-04 to IP

Investigations of the reaction kinetics of the deposition of silica and phosphosilicate glasses were made to determine the parameters governing the rates of reactions. Dependence of deposition rates on substrate temperature shows that the reactions obey the absolute rate theory of heterogeneous reactions at a solid surface. The silane oxidation reaction is of half-order with respect to oxygen, of half-order with respect to silane, and of first-order over-all. The phosphine oxidation reaction is of second-order over-all. The unusual decrease in deposition rate with increasing oxygen concentrations, during the oxidation of silane, has been shown to originate from the adsorption of oxygen on the silicon substrates, retarding the reaction.