Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process

Abstract

Gallium indium arsenide is a promising semiconductor for a wide range of device applications. The compound Ga0.47Ino.53As has the same lattice constant as InP, prompting considerable effort to grow it epitaxially on InP in order to minimize defects at the epi-substrate interface. This paper outlines the conditions that we believe are necessary for growing epitaxial layers of Ga0.47Ino.a~As on InP substrates. Experiments have been conducted to grow these layers under atmospheric pressure, unlike previous work which was done at reduced pressure. Emphasis has been placed on the use of an in situ etching of the InP substrate, with HC1, which we find to be critical for layer growth. Etch rates were controllable between 2-20 ~m/min and no dopant pile-up was observed using Auger spectroscopy. Gal-zIn~As layers were grown at 700~ with 0.3 ~--x --~ 0.6 and exhibited a linear relation to the In/Ga ratio in the reactant stream.

In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor

“…It is clear that the etching rate for all compositional wavelengths increases with T s . The activation energy (E a ) of InP is estimated to be 0.93 eV, which is very close to the previously reported value (0.9 eV) [1]. The difference in etching rates for all compositional wavelengths is less than a factor of 2.…”

“…Etching proceeds in the growth chamber just prior to regrowth, so the crystal quality of the regrown layer is improved because of the lack of contaminants and oxides conventionally originated from the regrown surface. Since present opto-electronic devices for telecom applications are made of InP-based materials, in situ etching for these materials by using various etching gases, such as HCl [1][2][3][4], tertiarybutylchloride (TBCl) [5][6][7], PCl 3 [8,9], and ethylene [10], has been reported. Furthermore, InGaAsP multiple-quantum-well (MQW) laser diodes (LDs), whose mesa stripes were formed by in situ etching, have already been fabricated [5][6][7]11].…”

Analyse des conditions de croissance de GaxIn(1- x)As/InP par la méthode aux hydrures

“…Appl. 24 (1989) [143][144][145][146][147][148][149][150] [3,4,5], épitaxie par jets moléculaires [6], ou dépôt chimique à partir d'organo-métalliques [7,8]. La compréhension des mécanismes de croissance est nécessaire à l'optimisation des conditions d'épitaxie.…”