Abstract:The orientation dependence of the deposition of
InAsxPfalse(1−xfalse)
epitaxial layers on
normalGaAs
using an
AsH3
,
PH3
, indium, and
normalHCl
vapor‐deposition system was studied. The total flow rate and the ratio of Group III to total Group V components were held constant while deposits were made simultaneously on (100), (110), (111)A and (111) substrates. Similar deposits were made under the same conditions on spherical, single‐crystal
normalGaAs
substrates. Growth on these spheres exhibited fa… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.