The Orientation Dependence of Epitaxial InAs[sub x]P[sub (1−x)] on GaAs

Abstract

The orientation dependence of the deposition of InAsxPfalse(1−xfalse) epitaxial layers on normalGaAs using an AsH3 , PH3 , indium, and normalHCl vapor‐deposition system was studied. The total flow rate and the ratio of Group III to total Group V components were held constant while deposits were made simultaneously on (100), (110), (111)A and (111) substrates. Similar deposits were made under the same conditions on spherical, single‐crystal normalGaAs substrates. Growth on these spheres exhibited facets that correspond to slow growth and high‐perfection orientations. The sphere surface morphologies were similar to the planar substrates over much of the composition range.