Survey of Experimental Work on Heterojunctions

Sharma, B. L.; Purohit, R.K.

doi:10.1016/b978-0-08-017747-2.50012-5

Semiconductor Heterojunctions 1974

DOI: 10.1016/b978-0-08-017747-2.50012-5

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Survey of Experimental Work on Heterojunctions

B. L. Sharma¹,

R.K. Purohit²

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1976

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Cited by 9 publications

References 257 publications

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Depletion layer characteristics of heterojunctions with built-in homojunction

Nahar

Nagchoudhuri²

1976

Phys. Stat. Sol. (a)

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Expressions are derived for the electric field, potential, depletion width, and capacitance for a heterojunction with a built‐in homojunction due to interdiffusion including the effects of interface states at the metallurgical junction. It is found that when the total interface charge is equal to the total excess charge stored in the interdiffused region, a maximum for the apparent built‐in potential is obtained. This is always greater than the built‐in potential of the system and increases in a square law fashion with the length of the interdiffused region.

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Depletion layer characteristics of heterojunctions with built-in homojunction

Nahar

Nagchoudhuri²

1976

Phys. Stat. Sol. (a)

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Mixed donor-acceptor molecular heterojunctions for photovoltaic applications. II. Device performance

Xue

Rand

Uchida

et al. 2005

Journal of Applied Physics

186

125

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We demonstrate efficient organic photovoltaic cells employing a photoactive region composed of a mixed donor-acceptor molecular layer, the properties of which were introduced in the preceding paper (Part I) [Rand et al., J. Appl. Phys. 98, 124902 (2005)]. The hybrid planar-mixed heterojunction (PM-HJ) device architecture consists of a film mixture of donor and acceptor molecules inserted between layers of pure donor and acceptor composition. Using the donor, copper phthalocyanine, and the acceptor, C60, we demonstrate a hybrid PM-HJ cell with a maximum power conversion efficiency of (5.0±0.3)% under 1–4suns simulated AM1.5 solar illumination. The current-voltage characteristics of the PM-HJ cell are described using a model based on the field-dependent charge collection length.

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Carrier transport properties of Al∕CdS∕GaSb structures

Sridaran

Chavan

Dutta

2006

Applied Physics Letters

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Low temperature chemical bath deposited cadmium sulfide ͑CdS͒ has been used as an interfacial layer on n-and p-GaSb to overcome the limitations posed by the highly unstable GaSb surface. The electrical characteristics of Al/ CdS / GaSb structures have been studied. The current transport in these structures is governed by the barriers at the CdS / GaSb interface with an effective series resistance from the bulk of the interfacial CdS layer. Space charge limited current in the interfacial layer gives rise to an increase in the forward turn-on voltages. These structures demonstrate excellent characteristics in the reverse bias region such as high breakdown voltages, low surface leakage current, and good reverse current saturation. Significantly, rectifying junctions on p-GaSb have been achieved with barrier height as high as ϳ0.6 eV and breakdown voltages of ϳ4.5 V.

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Survey of Experimental Work on Heterojunctions

Cited by 9 publications

References 257 publications

Depletion layer characteristics of heterojunctions with built-in homojunction

Depletion layer characteristics of heterojunctions with built-in homojunction

Mixed donor-acceptor molecular heterojunctions for photovoltaic applications. II. Device performance

Carrier transport properties of Al∕CdS∕GaSb structures

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